E-LIB Suche - Ergebnisse für: Kelner, G.

1

Material and n-p junction properties of N-, P-, and N/P-imp..:

Gardner, Jason A. ; Edwards, Andrew ; Rao, Mulpuri V....
Journal of Applied Physics. 83 (1998) 10 - p. 5118-5124 , 1998

Link: https://doi.org/10.1063/..

2

Nitrogen and aluminum implantation in high resistivity sili..:

Dwight, Deborah ; Rao, Mulpuri V. ; Holland, O. W....
Journal of Applied Physics. 82 (1997) 11 - p. 5327-5333 , 1997

Link: https://doi.org/10.1063/..

3

Phosphorus and boron implantation in 6H–SiC:

Rao, Mulpuri V. ; Gardner, Jason A. ; Chi, P. H....
Journal of Applied Physics. 81 (1997) 10 - p. 6635-6641 , 1997

Link: https://doi.org/10.1063/..

4

Ion implantation in 6HSiC:

Rao, M.V. ; Nordstrom, D. ; Gardner, J.A....
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 127-128 (1997) - p. 655-659 , 1997

Link: https://doi.org/10.1016/..

5

Fabrication and characterization of GaN FETs:

Binari, S.C. ; Kruppa, W. ; Dietrich, H.B....
Solid-State Electronics. 41 (1997) 10 - p. 1549-1554 , 1997

Link: https://doi.org/10.1016/..

6

GaN FETs for microwave and high-temperature applications:

Binari, Steven C. ; Doverspike, K. ; Kelner, G...
Solid-State Electronics. 41 (1997) 2 - p. 177-180 , 1997

Link: https://doi.org/10.1016/..

7

Compensation implants in 6H–SiC:

Edwards, Andrew ; Dwight, Deborah N. ; Rao, Mulpuri V....
Journal of Applied Physics. 82 (1997) 9 - p. 4223-4227 , 1997

Link: https://doi.org/10.1063/..

8

Growth and properties of scandium epitaxial films on GaN:

Kaplan, R. ; Prokes, S. M. ; Binari, S. C..
Applied Physics Letters. 68 (1996) 23 - p. 3248-3250 , 1996

Link: https://doi.org/10.1063/..

9

Elevated temperature nitrogen implants in 6H-SiC:

Gaedner, Jason ; Rao, Mulpuri V. ; Holland, O. W....
Journal of Electronic Materials. 25 (1996) 5 - p. 885-892 , 1996

Link: https://doi.org/10.1007/..

10

Al, Al/C and Al/Si implantations in 6H-SiC:

Rao, Mulpuri V. ; Griffiths, Peter ; Gardner, Jason...
Journal of Electronic Materials. 25 (1996) 1 - p. 75-80 , 1996

Link: https://doi.org/10.1007/..

11

PN junction formation in 6HSiC by acceptor implantation i..:

Rao, Mulpuri V. ; Gardner, Jason ; Griffiths, Peter...
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 106 (1995) 1-4 - p. 333-338 , 1995

Link: https://doi.org/10.1016/..

12

Wet Chemical Etching with Lactic Acid Solutions for InP ‐ b..:

Ikossi‐Anastasiou, K. ; Binari, S. C. ; Kelner, G....
Journal of The Electrochemical Society. 142 (1995) 10 - p. 3558-3564 , 1995

Link: https://doi.org/10.1149/..

13

H, He, and N implant isolation of n-type GaN:

Binari, S. C. ; Dietrich, H. B. ; Kelner, G....
Journal of Applied Physics. 78 (1995) 5 - p. 3008-3011 , 1995

Link: https://doi.org/10.1063/..

14

Al and B ion-implantations in 6H- and 3C-SiC:

Rao, Mulpuri V. ; Griffiths, Peter ; Holland, O. W....
Journal of Applied Physics. 77 (1995) 6 - p. 2479-2485 , 1995

Link: https://doi.org/10.1063/..

15

Ligand for FLT3/FLK2 receptor tyrosine kinase regulates gro..:

Hannum, C. ; Culpepper, J. ; Campbell, D....
Nature. 368 (1994) 6472 - p. 643-648 , 1994

Link: https://doi.org/10.1038/..