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Khoshakhlagh, A.R.
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1

A significant toughness enhancement, and microstructural ev..:

Mousavi Anijdan, S.H. ; Aghaie-Khafri, M. ; Khoshakhlagh, A.R....
Journal of Materials Research and Technology.  15 (2021)  - p. 5776-5786 , 2021
Link: https://doi.org/10.1016/..
 
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2

A significant toughness enhancement, and microstructural ev..:

S.H. Mousavi Anijdan ; M. Aghaie-Khafri ; A.R. Khoshakhlagh...
http://www.sciencedirect.com/science/article/pii/S2238785421012928.  , 2021
Link: https://doi.org/10.1016/..
 
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3

Background carrier concentration in midwave and longwave In..:

Khoshakhlagh, A. ; Jaeckel, F. ; Hains, C....
Applied Physics Letters.  97 (2010)  5 - p. , 2010
Link: https://doi.org/10.1063/..
 
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4

Performance improvement of InAs/GaSb strained layer superla..:

Plis, E. ; Khoshakhlagh, A. ; Myers, S....
Applied Physics Letters.  96 (2010)  3 - p. 033502 , 2010
Link: https://doi.org/10.1063/..
 
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5

Study of Surface Treatments on InAs/GaSb Superlattice LWIR ..:

Kutty, M. N. ; Plis, E. ; Khoshakhlagh, A....
Journal of Electronic Materials.  39 (2010)  10 - p. 2203-2209 , 2010
Link: https://doi.org/10.1007/..
 
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6

Optimization of InAs/GaSb type-II superlattice interfaces f..:

Khoshakhlagh, A. ; Plis, E. ; Myers, S....
Journal of Crystal Growth.  311 (2009)  7 - p. 1901-1904 , 2009
Link: https://doi.org/10.1016/..
 
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7

Simultaneous interfacial misfit array formation and antipha..:

Huang, S. H. ; Balakrishnan, G. ; Khoshakhlagh, A...
Applied Physics Letters.  93 (2008)  7 - p. , 2008
Link: https://doi.org/10.1063/..
 
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8

Lasing characteristics of GaSb∕GaAs self-assembled quantum ..:

Tatebayashi, J. ; Khoshakhlagh, A. ; Huang, S. H....
Applied Physics Letters.  90 (2007)  26 - p. , 2007
Link: https://doi.org/10.1063/..
 
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9

Atomistic modeling of strain distribution in self-assembled..:

Jallipalli, A. ; Balakrishnan, G. ; Huang, S.H....
Journal of Crystal Growth.  303 (2007)  2 - p. 449-455 , 2007
Link: https://doi.org/10.1016/..
 
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10

Bias dependent dual band response from InAs∕Ga(In)Sb type I..:

Khoshakhlagh, A. ; Rodriguez, J. B. ; Plis, E....
Applied Physics Letters.  91 (2007)  26 - p. , 2007
Link: https://doi.org/10.1063/..
 
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11

Epitaxial growth and formation of interfacial misfit array ..:

Huang, S. H. ; Balakrishnan, G. ; Mehta, M....
Applied Physics Letters.  90 (2007)  16 - p. , 2007
Link: https://doi.org/10.1063/..
 
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12

GaSb∕GaAs type II quantum dot solar cells for enhanced infr..:

Laghumavarapu, R. B. ; Moscho, A. ; Khoshakhlagh, A....
Applied Physics Letters.  90 (2007)  17 - p. , 2007
Link: https://doi.org/10.1063/..
 
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13

Strain relief by periodic misfit arrays for low defect dens..:

Huang, S. H. ; Balakrishnan, G. ; Khoshakhlagh, A....
Applied Physics Letters.  88 (2006)  13 - p. , 2006
Link: https://doi.org/10.1063/..
 
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14

GaSb quantum-well-based "buffer-free" vertical light emitti..:

Mehta, M. ; Balakrishnan, G. ; Huang, S....
Applied Physics Letters.  89 (2006)  21 - p. , 2006
Link: https://doi.org/10.1063/..
 
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15

Formation and optical characteristics of strain-relieved an..:

Tatebayashi, J. ; Khoshakhlagh, A. ; Huang, S. H....
Applied Physics Letters.  89 (2006)  20 - p. , 2006
Link: https://doi.org/10.1063/..
 
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