E-LIB Suche - Ergebnisse für: Kilchytska, V.

1

Characteristics of noise degradation and recovery in gamma-..:

Amor, S. ; Kilchytska, V. ; Tounsi, F....
Solid-State Electronics. 194 (2022) - p. 108300 , 2022

Link: https://doi.org/10.1016/..

2

On the Separate Extraction of Self-Heating and Substrate Ef..:

Nyssens, Lucas ; Rack, M. ; Halder, A...
IEEE Electron Device Letters. 42 (2021) 5 - p. 665-668 , 2021

Link: https://doi.org/10.1109/..

3

A method for threshold voltage extraction in junctionless M..:

Rudenko, T. ; Nazarov, A. ; Barraud, S...
Solid-State Electronics. 168 (2020) - p. 107723 , 2020

Link: https://doi.org/10.1016/..

4

Experimental results on diodes and BIMOS ESD devices in 28 ..:

Galy, Ph. ; Soto, F. ; Bourgeat, J....
Microelectronics Reliability. 114 (2020) - p. 113938 , 2020

Link: https://doi.org/10.1016/..

5

28 nm FDSOI analog and RF Figures of Merit at N2 cryogenic ..:

Kazemi Esfeh, B. ; Planes, N. ; Haond, M....
Solid-State Electronics. 159 (2019) - p. 77-82 , 2019

Link: https://doi.org/10.1016/..

6

gm/ID-derivative Method for Threshold Voltage Extraction in..:

, In: 2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS),

Rudenko, T. ; Nazarov, A. ; Barraud, S... - p. 1-4 , 2019

Link: https://doi.org/10.1109/..

7

28 FDSOI RF Figures of Merit down to 4.2 K:

, In: 2019 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S),

Nyssens, L. ; Halder, A. ; Esfeh, B. Kazemi... - p. 1-3 , 2019

Link: https://doi.org/10.1109/..

8

Back-gate bias Effect on the MOSFET-C CMOS UTBB Performance..:

, In: 2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS),

Martinez, A. ; Alvarado, J. ; Kilchytska, V... - p. 1-3 , 2019

Link: https://doi.org/10.1109/..

9

Low-Frequency Noise Transistor Performance for UTBB FDSOI M..:

, In: 2019 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S),

Van Brandt, L. ; Esfeh, B. Kazemi ; Planes, N... - p. 1-2 , 2019

Link: https://doi.org/10.1109/..

10

Development, characterisation and simulation of wafer bonde..:

Gammon, P.M. ; Chan, C.W. ; Li, F....
Materials Science in Semiconductor Processing. 78 (2018) - p. 69-74 , 2018

Link: https://doi.org/10.1016/..

11

An in-depth analysis of temperature effect on DIBL in UTBB ..:

Pereira, A.S.N. ; de Streel, G. ; Planes, N....
Solid-State Electronics. 128 (2017) - p. 67-71 , 2017

Link: https://doi.org/10.1016/..

12

RF SOI CMOS technology on 1st and 2nd generation trap-rich ..:

Kazemi Esfeh, B. ; Makovejev, S. ; Basso, Didier...
Solid-State Electronics. 128 (2017) - p. 121-128 , 2017

Link: https://doi.org/10.1016/..

13

Assessment of 28 nm UTBB FD-SOI technology platform for RF ..:

Kazemi Esfeh, B. ; Kilchytska, V. ; Barral, V....
Solid-State Electronics. 117 (2016) - p. 130-137 , 2016

Link: https://doi.org/10.1016/..

14

Comparison of self-heating and its effect on analogue perfo..:

Makovejev, S. ; Planes, N. ; Haond, M....
Solid-State Electronics. 115 (2016) - p. 219-224 , 2016

Link: https://doi.org/10.1016/..

15

A review of special gate coupling effects in long-channel S..:

Rudenko, T. ; Nazarov, A. ; Kilchytska, V..
Solid-State Electronics. 117 (2016) - p. 66-76 , 2016

Link: https://doi.org/10.1016/..