E-LIB Suche - Ergebnisse für: Kim, Giuk

1

Charge Trap Flash with Superior Program Efficiency by Negat..:

, In: 2024 International VLSI Symposium on Technology, Systems and Applications (VLSI TSA),

Kim, Giuk ; Choi, Hyojun ; Lee, Sangho... - p. 1-2 , 2024

Link: https://doi.org/10.1109/..

2

Design Guidelines of Hafnia Ferroelectrics and Gate-Stack f..:

Lee, Sangho ; Kim, Giuk ; Lee, Youngkyu...
IEEE Transactions on Electron Devices. 71 (2024) 3 - p. 1865-1871 , 2024

Link: https://doi.org/10.1109/..

3

Novel Strategies Toward High-Performance FeFET for Computin..:

, In: 2024 International VLSI Symposium on Technology, Systems and Applications (VLSI TSA),

Kim, Giuk ; Choi, Hyojun ; Lee, Sangho... - p. 1-2 , 2024

Link: https://doi.org/10.1109/..

4

A method of controlling the imprint effect in hafnia ferroe..:

Shin, Hunbeom ; Gaddam, Venkateswarlu ; Goh, Youngin...
Applied Physics Letters. 122 (2023) 2 - p. , 2023

Link: https://doi.org/10.1063/..

5

High Pressure Microwave Annealing Effect on Electrical Prop..:

Jung, Minhyun ; Kim, Chaeheon ; Hwang, Junghyeon...
ACS Applied Electronic Materials. , 2023

Link: https://doi.org/10.1021/..

6

Oxygen Vacancy Control as a Strategy to Enhance Imprinting ..:

Jeong, Yeongseok ; Gaddam, Venkateswarlu ; Goh, Youngin...
IEEE Transactions on Electron Devices. 70 (2023) 1 - p. 354-359 , 2023

Link: https://doi.org/10.1109/..

7

Effect of Floating Gate Insertion on the Analog States of F..:

Lee, Sangho ; Lee, Youngkyu ; Kim, Giuk...
IEEE Transactions on Electron Devices. 70 (2023) 1 - p. 349-353 , 2023

Link: https://doi.org/10.1109/..

8

The Opportunity of Negative Capacitance Behavior in Flash M..:

Kim, Taeho ; Kim, Giuk ; Lee, Young Kyu...
Advanced Functional Materials. 33 (2022) 7 - p. , 2022

Link: https://doi.org/10.1002/..

9

Steep-Slope Transistor with an Imprinted Antiferroelectric ..:

Lee, Sangho ; Lee, Yongsun ; Kim, Taeho...
ACS Applied Materials & Interfaces. 14 (2022) 47 - p. 53019-53026 , 2022

Link: https://doi.org/10.1021/..

10

Design Guidelines of Thermally Stable Hafnia Ferroelectrics..:

, In: 2022 International Electron Devices Meeting (IEDM),

Kim, Giuk ; Shin, Hunbeom ; Eom, Taehyong... - p. 5.4.1-5.4.4 , 2022

Link: https://doi.org/10.1109/..

11

High performance ferroelectric field-effect transistors for..:

Kim, Giuk ; Lee, Sangho ; Eom, Taehyong...
Journal of Materials Chemistry C. 10 (2022) 26 - p. 9802-9812 , 2022

Link: https://doi.org/10.1039/..

12

Power-Delay Area-Efficient Processing-In-Memory Based on Na..:

Kim, Giuk ; Ko, Dong Han ; Kim, Taeho...
ACS Applied Materials & Interfaces. 15 (2022) 1 - p. 1463-1474 , 2022

Link: https://doi.org/10.1021/..

13

Novel Approach to High κ (∼59) and Low EOT (∼3.8 Å) near th..:

Gaddam, Venkateswarlu ; Kim, Giuk ; Kim, Taeho...
ACS Applied Materials & Interfaces. 14 (2022) 38 - p. 43463-43473 , 2022

Link: https://doi.org/10.1021/..

14

Non-Volatile Majority Function Logic Using Ferroelectric Me..:

Hwang, Junghyeon ; Lim, Sehee ; Kim, Giuk..
IEEE Electron Device Letters. 43 (2022) 7 - p. 1049-1052 , 2022

Link: https://doi.org/10.1109/..

15

Vertical‐Pillar Ferroelectric Field‐Effect‐Transistor Memor:

Lee, Sangho ; Kim, Giuk ; Kim, Taeho..
physica status solidi (RRL) – Rapid Research Letters. , 2021

Link: https://doi.org/10.1002/..