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Kim, Kyoungdu
24  results:
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1

Thickness dependence of resistive switching characteristics..:

Kim, Kyoungdu ; Kim, Hae-In ; Lee, Taehun...
Semiconductor Science and Technology.  38 (2023)  4 - p. 045002 , 2023
Link: https://doi.org/10.1088/..
 
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2

Improved Negative Bias Stability of Sol–Gel-Processed SnO2 ..:

Lee, Taehun ; Kim, Kyoungdu ; Kim, Hae-In...
ACS Applied Electronic Materials.  , 2023
Link: https://doi.org/10.1021/..
 
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3

Flexible Sol-Gel—Processed Y2O3 RRAM Devices Obtained via U..:

Kim, Hyeon-Joong ; Kim, Do-Won ; Lee, Won-Yong...
Materials.  15 (2022)  5 - p. 1899 , 2022
Link: https://doi.org/10.3390/..
 
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4

Enhanced Switching Reliability of Sol–Gel-Processed Y2O3 RR..:

Kim, Do-Won ; Kim, Hyeon-Joong ; Lee, Won-Yong...
Materials.  15 (2022)  5 - p. 1943 , 2022
Link: https://doi.org/10.3390/..
 
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5

Room-Temperature High-Detectivity Flexible Near-Infrared Ph..:

Lee, Won-Yong ; Kim, Kyoungdu ; Lee, Sin-Hyung...
ACS Omega.  7 (2022)  12 - p. 10262-10267 , 2022
Link: https://doi.org/10.1021/..
 
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6

Improved Environment Stability of Y2O3 RRAM Devices with Au..:

Kim, Hae-In ; Lee, Taehun ; Lee, Won-Yong...
Materials.  15 (2022)  19 - p. 6859 , 2022
Link: https://doi.org/10.3390/..
 
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7

Environmentally and Electrically Stable Sol–Gel-Deposited S..:

Lee, Won-Yong ; Kim, Do Won ; Kim, Hyeon Joong...
ACS Applied Materials & Interfaces.  14 (2022)  8 - p. 10558-10565 , 2022
Link: https://doi.org/10.1021/..
 
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8

Sol-gel-processed amorphous-phase ZrO2 based resistive rand..:

Kim, Kyoungdu ; Hong, Woongki ; Lee, Changmin...
Materials Research Express.  8 (2021)  11 - p. 116301 , 2021
Link: https://doi.org/10.1088/..
 
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9

Enhanced switching ratio of sol–gel-processed Y2O3 RRAM dev..:

Kim, Kyoungdu ; Lee, Changmin ; Lee, Won-Yong...
Semiconductor Science and Technology.  37 (2021)  1 - p. 015007 , 2021
Link: https://doi.org/10.1088/..
 
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10

Influence of Active Channel Layer Thickness on SnO2 Thin-Fi..:

Kim, Do Won ; Kim, Hyeon Joong ; Lee, Changmin...
Electronics.  10 (2021)  2 - p. 200 , 2021
Link: https://doi.org/10.3390/..
 
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11

Improved Environment Stability of Y(2)O(3) RRAM Devices wit..:

Kim, Hae-In ; Lee, Taehun ; Lee, Won-Yong...
http://www.ncbi.nlm.nih.gov/pmc/articles/PMC9572085/.  , 2022
Link: http://www.ncbi.nlm.nih...
 
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12

Enhanced Switching Reliability of Sol–Gel-Processed Y(2)O(3..:

Kim, Do-Won ; Kim, Hyeon-Joong ; Lee, Won-Yong...
http://www.ncbi.nlm.nih.gov/pmc/articles/PMC8911950/.  , 2022
Link: http://www.ncbi.nlm.nih...
 
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13

Room-Temperature High-Detectivity Flexible Near-Infrared Ph..:

Lee, Won-Yong ; Kim, Kyoungdu ; Lee, Sin-Hyung...
http://www.ncbi.nlm.nih.gov/pmc/articles/PMC8973059/.  , 2022
Link: http://www.ncbi.nlm.nih...
 
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14

Flexible Sol-Gel—Processed Y(2)O(3) RRAM Devices Obtained v..:

Kim, Hyeon-Joong ; Kim, Do-Won ; Lee, Won-Yong...
http://www.ncbi.nlm.nih.gov/pmc/articles/PMC8912058/.  , 2022
Link: http://www.ncbi.nlm.nih...
 
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15

Improved Environment Stability of Y 2 O 3 RRAM Devices with..:

Hae-In Kim ; Taehun Lee ; Won-Yong Lee...
https://www.mdpi.com/1996-1944/15/19/6859.  , 2022
Link: https://doi.org/10.3390/..
 
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