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Kirste, Ronny
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1

High conductivity and low activation energy in p-type AlGaN:

Rathkanthiwar, Shashwat ; Bagheri, Pegah ; Khachariya, Dolar...
Applied Physics Letters.  122 (2023)  9 - p. , 2023
Link: https://doi.org/10.1063/..
 
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2

High p-conductivity in AlGaN enabled by polarization field ..:

Rathkanthiwar, Shashwat ; Reddy, Pramod ; Moody, Baxter...
Applied Physics Letters.  122 (2023)  15 - p. , 2023
Link: https://doi.org/10.1063/..
 
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3

High conductivity in Ge-doped AlN achieved by a non-equilib..:

Bagheri, Pegah ; Quiñones-Garcia, Cristyan ; Khachariya, Dolar...
Applied Physics Letters.  122 (2023)  14 - p. , 2023
Link: https://doi.org/10.1063/..
 
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4

Performance and reliability of state-of-the-art commercial ..:

Loveless, James ; Kirste, Ronny ; Moody, Baxter...
Solid-State Electronics.  209 (2023)  - p. 108775 , 2023
Link: https://doi.org/10.1016/..
 
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5

Anderson transition in compositionally graded p-AlGaN:

Rathkanthiwar, Shashwat ; Reddy, Pramod ; Quiñones, Cristyan E....
Journal of Applied Physics.  134 (2023)  19 - p. , 2023
Link: https://doi.org/10.1063/..
 
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6

Large‐Area, Solar‐Blind, Sub‐250 nm Detection AlGaN Avalanc..:

Reddy, Pramod ; Mecouch, Will ; Hayden Breckenridge, M....
physica status solidi (RRL) – Rapid Research Letters.  16 (2022)  6 - p. , 2022
Link: https://doi.org/10.1002/..
 
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7

Low resistivity, p-type, N-Polar GaN achieved by chemical p..:

Rathkanthiwar, Shashwat ; Szymanski, Dennis ; Khachariya, Dolar...
Applied Physics Express.  15 (2022)  8 - p. 081004 , 2022
Link: https://doi.org/10.35848..
 
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8

Vertical GaN junction barrier Schottky diodes with near-ide..:

Khachariya, Dolar ; Stein, Shane ; Mecouch, Will...
Applied Physics Express.  15 (2022)  10 - p. 101004 , 2022
Link: https://doi.org/10.35848..
 
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9

The role of Ga supersaturation on facet formation in the ep..:

Wang, Ke ; Kirste, Ronny ; Mita, Seiji...
Applied Physics Letters.  120 (2022)  3 - p. , 2022
Link: https://doi.org/10.1063/..
 
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10

UVC optoelectronics based on AlGaN on AlN single crystal su..:

, In: 2022 Compound Semiconductor Week (CSW),
Reddy, Pramod ; Loveless, James ; Quinones-Garcia, Cristyan... - p. 1-2 , 2022
Link: https://doi.org/10.1109/..
 
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11

Pseudomorphic growth of thick Al0.6Ga0.4N epilayers on AlN ..:

Rathkanthiwar, Shashwat ; Houston Dycus, J. ; Mita, Seiji...
Applied Physics Letters.  120 (2022)  20 - p. , 2022
Link: https://doi.org/10.1063/..
 
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12

Spintronic Terahertz Emission in Ultrawide Bandgap Semicond..:

Comstock, Andrew ; Biliroglu, Melike ; Seyitliyev, Dovletgeldi...
Advanced Optical Materials.  11 (2022)  1 - p. , 2022
Link: https://doi.org/10.1002/..
 
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13

Record >10 MV/cm mesa breakdown fields in Al0.85Ga0.15N/Al0..:

Khachariya, Dolar ; Mita, Seiji ; Reddy, Pramod...
Applied Physics Letters.  120 (2022)  17 - p. , 2022
Link: https://doi.org/10.1063/..
 
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14

Point-defect management in homoepitaxially grown Si-doped G..:

Rathkanthiwar, Shashwat ; Bagheri, Pegah ; Khachariya, Dolar...
Applied Physics Express.  15 (2022)  5 - p. 051003 , 2022
Link: https://doi.org/10.35848..
 
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15

Doping and compensation in heavily Mg doped Al-rich AlGaN f..:

Bagheri, Pegah ; Klump, Andrew ; Washiyama, Shun...
Applied Physics Letters.  120 (2022)  8 - p. , 2022
Link: https://doi.org/10.1063/..
 
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