E-LIB Suche - Ergebnisse für: Kittl, J A

1

Shallow electron traps in high-k insulating oxides:

Izmailov, R.A. ; O'Sullivan, B.J. ; Popovici, M...
Solid-State Electronics. 183 (2021) - p. 108052 , 2021

Link: https://doi.org/10.1016/..

2

On the validity and applicability of models of negative cap..:

Kittl, J. A. ; Obradovic, B. ; Reddy, D....
Applied Physics Letters. 113 (2018) 4 - p. , 2018

Link: https://doi.org/10.1063/..

3

Intrinsic electron traps in atomic-layer deposited HfO2 ins..:

Cerbu, F. ; Madia, O. ; Andreev, D. V....
Applied Physics Letters. 108 (2016) 22 - p. , 2016

Link: https://doi.org/10.1063/..

4

Germanium-related deep electron traps in ALD-grown HfO2 ins..:

Madia, O. ; Afanas'ev, V.V. ; Kittl, J.A....
Microelectronic Engineering. 147 (2015) - p. 188-191 , 2015

Link: https://doi.org/10.1016/..

5

Thermal-stability optimization of Al2O3/Cu–Te based conduct..:

Goux, L. ; Opsomer, K. ; Franquet, A....
Thin Solid Films. 533 (2013) - p. 29-33 , 2013

Link: https://doi.org/10.1016/..

6

Study of the impact of doping concentration and Schottky ba..:

Firrincieli, A. ; Martens, K. ; Simoen, E...
Microelectronic Engineering. 106 (2013) - p. 129-131 , 2013

Link: https://doi.org/10.1016/..

7

Scaled X-bar TiN/HfO2/TiN RRAM cells processed with optimiz..:

Chen, Y.Y. ; Goux, L. ; Pantisano, L....
Microelectronic Engineering. 112 (2013) - p. 92-96 , 2013

Link: https://doi.org/10.1016/..

8

Electron barrier height at CuxTe1−x/Al2O3 interfaces of con..:

Afanas'ev, V.V. ; De Stefano, F. ; Houssa, M....
Thin Solid Films. 533 (2013) - p. 34-37 , 2013

Link: https://doi.org/10.1016/..

9

Direct physical evidence of mechanisms of leakage and equiv..:

Pawlak, M. A. ; Swerts, J. ; Popovici, M....
Applied Physics Letters. 101 (2012) 4 - p. 042901 , 2012

Link: https://doi.org/10.1063/..

10

Intrinsic Switching Behavior in HfO2 RRAM by Fast Electrica..:

, In: 2012 4th IEEE International Memory Workshop,

Fantini, A. ; Wouters, D. J. ; Degraeve, R.... - p. 1-4 , 2012

Link: https://doi.org/10.1109/..

11

Semiconducting-like filament formation in TiN/HfO2/TiN resi..:

De Stefano, F. ; Houssa, M. ; Kittl, J. A....
Applied Physics Letters. 100 (2012) 14 - p. , 2012

Link: https://doi.org/10.1063/..

12

The VO2 interface, the metal-insulator transition tunnel ju..:

Martens, K. ; Radu, I. P. ; Mertens, S....
Journal of Applied Physics. 112 (2012) 12 - p. , 2012

Link: https://doi.org/10.1063/..

13

Insights into Ni-filament formation in unipolar-switching N..:

Yin Chen, Yang ; Pourtois, G. ; Adelmann, C....
Applied Physics Letters. 100 (2012) 11 - p. , 2012

Link: https://doi.org/10.1063/..

14

Towards barrier height modulation in HfO2/TiN by oxygen sca..:

Pantisano, Luigi ; Afanas'ev, V.V. ; Cimino, S....
Microelectronic Engineering. 88 (2011) 7 - p. 1251-1254 , 2011

Link: https://doi.org/10.1016/..

15

TiNx/HfO2 interface dipole induced by oxygen scavenging:

Afanas'ev, V. V. ; Stesmans, A. ; Pantisano, L....
Applied Physics Letters. 98 (2011) 13 - p. , 2011

Link: https://doi.org/10.1063/..