E-LIB Suche - Ergebnisse für: Knežević, Tihomir

1

Identifying nano-Schottky diode currents in silicon diodes ..:

, In: 2023 35th International Conference on Microelectronic Test Structure (ICMTS),

Knezevic, Tihomir ; Nanver, Lis K - p. 1-6 , 2023

Link: https://doi.org/10.1109/..

2

Boron-Related Defects in N-Type 4H-SiC Schottky Barrier Dio..:

Knezevic, Tihomir ; Jelavić, Eva ; Yamazaki, Yuichi...
Materials. 16 (2023) 9 - p. 3347 , 2023

Link: https://doi.org/10.3390/..

3

Radiation Response of Large-Area 4H-SiC Schottky Barrier Di..:

Bernat, Robert ; Knežević, Tihomir ; Radulović, Vladimir...
Materials. 16 (2023) 6 - p. 2202 , 2023

Link: https://doi.org/10.3390/..

4

4H-SiC Schottky barrier diodes as radiation detectors: A ro..:

Capan, Ivana ; Bernat, Robert ; Makino, Takahiro.
Diamond and Related Materials. 137 (2023) - p. 110072 , 2023

Link: https://doi.org/10.1016/..

5

Distinguishing the EH1 and S1 defects in n-type 4H-SiC by L..:

Knežević, Tihomir ; Brodar, Tomislav ; Radulović, Vladimir...
Applied Physics Express. 15 (2022) 10 - p. 101002 , 2022

Link: https://doi.org/10.35848..

6

PureB diode fabrication using physical or chemical vapor de..:

Thammaiah, Shivakumar D. ; Liu, Xingyu ; Knežević, Tihomir...
Solid-State Electronics. 177 (2021) - p. 107938 , 2021

Link: https://doi.org/10.1016/..

7

Low-Temperature Electrical Performance of PureB Photodiodes..:

Knezevic, Tihomir ; Suligoj, Tomislav ; Capan, Ivana.
IEEE Transactions on Electron Devices. 68 (2021) 6 - p. 2810-2817 , 2021

Link: https://doi.org/10.1109/..

8

Nanolayer boron-semiconductor interfaces and their device a..:

Nanver, Lis K. ; Qi, Lin ; Liu, Xingyu.
Solid-State Electronics. 186 (2021) - p. 108041 , 2021

Link: https://doi.org/10.1016/..

9

Optoelectrical Operation Stability of Broadband PureGaB Ge-..:

Krakers, Max ; Knežević, Tihomir ; Nanver, Lis K.
Journal of Electronic Materials. 50 (2021) 12 - p. 7026-7036 , 2021

Link: https://doi.org/10.1007/..

10

Nanometer-thin pure boron CVD layers as material barrier to..:

Shivakumar, D. Thammaiah ; Knežević, Tihomir ; Nanver, Lis K.
Journal of Materials Science: Materials in Electronics. 32 (2021) 6 - p. 7123-7135 , 2021

Link: https://doi.org/10.1007/..

11

Modeling of Electrical Properties of Al-on-Ge-on-Si Schottk..:

, In: 2020 43rd International Convention on Information, Communication and Electronic Technology (MIPRO),

Markovic, Lovro ; Knezevic, Tihomir ; Suligoj, Tomislav - p. 28-33 , 2020

Link: https://doi.org/10.23919..

12

Impact of ultra-thin-layer material parameters on the suppr..:

, In: 2019 42nd International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO),

Knezevic, Tihomir ; Suligoj, Tomislav ; Nanver, Lis K. - p. 24-29 , 2019

Link: https://doi.org/10.23919..

13

Indirect optical crosstalk reduction by highly-doped backsi..:

Osrečki, Željko ; Knežević, Tihomir ; Nanver, Lis K..
Optical and Quantum Electronics. 50 (2018) 3 - p. , 2018

Link: https://doi.org/10.1007/..

14

Silicon Drift Detectors with the Drift Field Induced by Pur..:

Knežević, Tihomir ; Nanver, Lis ; Suligoj, Tomislav
Photonics. 3 (2016) 4 - p. 54 , 2016

Link: https://doi.org/10.3390/..

15

Boron-layer silicon photodiodes for high-efficiency low-ene..:

Šakić, Agata ; Nanver, Lis K. ; Scholtes, Tom L.M....
Solid-State Electronics. 65-66 (2011) - p. 38-44 , 2011

Link: https://doi.org/10.1016/..