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Knobloch, Theresia
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1

Unified Charge Control Model for Back-Gated 2-D Field Effec..:

Mounir, Ahmed ; Iñiguez, Benjamin ; Lime, François...
IEEE Transactions on Electron Devices.  71 (2024)  1 - p. 884-889 , 2024
Link: https://doi.org/10.1109/..
 
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2

Fluoride dielectrics for 2D transistors:

Grasser, Tibor ; Waltl, Michael ; Knobloch, Theresia
Nature Nanotechnology.  , 2024
Link: https://doi.org/10.1038/..
 
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3

All van der Waals Semiconducting PtSe2 Field Effect Transis..:

Aslam, M. Awais ; Leitner, Simon ; Tyagi, Shubham...
Nano Letters.  24 (2024)  22 - p. 6529-6537 , 2024
Link: https://doi.org/10.1021/..
 
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4

Evidence of contact-induced variability in industrially-fab..:

Panarella, Luca ; Kaczer, Ben ; Smets, Quentin...
npj 2D Materials and Applications.  8 (2024)  1 - p. , 2024
Link: https://doi.org/10.1038/..
 
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5

(Invited) High-Performance Field-Effect Transistors Based o..:

Knobloch, Theresia ; Selberherr, Siegfried ; Grasser, Tibor
ECS Transactions.  111 (2023)  1 - p. 219-228 , 2023
Link: https://doi.org/10.1149/..
 
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6

Compact I-V model for back-gated and double-gated TMD FETs:

Mounir, Ahmed ; Iñiguez, Benjamin ; Lime, François...
Solid-State Electronics.  207 (2023)  - p. 108702 , 2023
Link: https://doi.org/10.1016/..
 
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7

Modeling 2D Material-Based Nanoelectronic Devices in the Pr..:

Knobloch, Theresia ; Waldhoer, Dominic ; Grasser, Tibor
IEEE Nanotechnology Magazine.  17 (2023)  4 - p. 15-25 , 2023
Link: https://doi.org/10.1109/..
 
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8

Multi-Scale Modeling of Transistors Based on the 2D Semicon..:

, In: 2023 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD),
Davoudi, Mohammad Rasool ; Khakbaz, Pedram ; Knobloch, Theresia... - p. 49-52 , 2023
Link: https://doi.org/10.23919..
 
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9

Comphy v3.0—A compact-physics framework for modeling charge..:

Waldhoer, Dominic ; Schleich, Christian ; Michl, Jakob...
Microelectronics Reliability.  146 (2023)  - p. 115004 , 2023
Link: https://doi.org/10.1016/..
 
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10

FinFETs based on layered 2D semiconductors:

Knobloch, Theresia ; Grasser, Tibor
Science China Materials.  66 (2023)  9 - p. 3759-3760 , 2023
Link: https://doi.org/10.1007/..
 
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11

Defects in Strontium Titanate: A First Principles Study:

, In: 2023 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD),
Bahrami, Mina ; Waldhoer, Dominic ; Khakbaz, Pedram... - p. 145-148 , 2023
Link: https://doi.org/10.23919..
 
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12

Challenges for Nanoscale CMOS Logic Based on Two-Dimensiona..:

Knobloch, Theresia ; Selberherr, Siegfried ; Grasser, Tibor
Nanomaterials.  12 (2022)  20 - p. 3548 , 2022
Link: https://doi.org/10.3390/..
 
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13

Perspective of 2D Integrated Electronic Circuits: Scientifi..:

Waltl, Michael ; Knobloch, Theresia ; Tselios, Konstantinos...
Advanced Materials.  34 (2022)  48 - p. , 2022
Link: https://doi.org/10.1002/..
 
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14

Finding Suitable Gate Insulators for Reliable 2D FETs:

, In: 2022 IEEE International Reliability Physics Symposium (IRPS),
Knobloch, Theresia ; Illarionov, Yury Yu. ; Grasser, Tibor - p. 1-10 , 2022
Link: https://doi.org/10.1109/..
 
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15

Improving stability in two-dimensional transistors with amo..:

Knobloch, Theresia ; Uzlu, Burkay ; Illarionov, Yury Yu....
Nature Electronics.  5 (2022)  6 - p. 356-366 , 2022
Link: https://doi.org/10.1038/..
 
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