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Kochkova, Anastasiia I.
21
results:
Search for persons
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Format
Online (21)
Mediatypes
Articles (Online) (19)
OpenAccess-fulltext (2)
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?
1
Proton damage effects in double polymorph γ/β-Ga2O3 diodes:
Polyakov, Alexander Y.
;
Vasilev, Anton A.
;
Kochkova, Anastasiia I.
...
Journal of Materials Chemistry C. 12 (2024) 3 - p. 1020-1029 , 2024
Link:
https://doi.org/10.1039/..
?
2
Impact of Hydrogen Plasma on Electrical Properties and Deep..:
Polyakov, Alexander Y.
;
Yakimov, Eugene B.
;
Nikolaev, Vladimir I.
...
Crystals. 13 (2023) 9 - p. 1400 , 2023
Link:
https://doi.org/10.3390/..
?
3
Impact of Hydrogen Plasma on Electrical Properties and Deep..:
Polyakov, Alexander Y
;
Yakimov, Eugene B
;
Nikolaev, Vladimir I
...
NFR/337627. , 2023
Link:
http://hdl.handle.net/10..
?
4
Impact of Hydrogen Plasma on Electrical Properties and Deep..:
Alexander Y. Polyakov
;
Eugene B. Yakimov
;
Vladimir I. Nikolaev
...
https://www.mdpi.com/2073-4352/13/9/1400. , 2023
Link:
https://doi.org/10.3390/..
?
5
Electrical properties and deep trap spectra in Ga2O3 films ..:
Polyakov, Alexander Y.
;
Nikolaev, Vladimir I.
;
Tarelkin, Sergey A.
...
Journal of Applied Physics. 129 (2021) 18 - p. , 2021
Link:
https://doi.org/10.1063/..
?
6
Trap states and carrier diffusion lengths in NiO/β-Ga2O3 he..:
Polyakov, A. Y.
;
Yakimov, E. B.
;
Saranin, D. S.
...
Journal of Applied Physics. 135 (2024) 16 - p. , 2024
Link:
https://doi.org/10.1063/..
?
7
Trap States and Carrier Diffusion in Czochralski (100) Sing..:
Nikolaev, V. I.
;
Polyakov, A. Y.
;
Krymov, V. M.
...
ECS Journal of Solid State Science and Technology. 13 (2024) 1 - p. 015003 , 2024
Link:
https://doi.org/10.1149/..
?
8
Editors' Choice—Structural, Electrical, and Luminescent Pro..:
Nikolaev, V. I.
;
Polyakov, A. Y.
;
Myasoedov, A. V.
...
ECS Journal of Solid State Science and Technology. 12 (2023) 11 - p. 115001 , 2023
Link:
https://doi.org/10.1149/..
?
9
Mechanism for Long Photocurrent Time Constants in α-Ga2O3 U..:
Polyakov, A. Y.
;
Almaev, A. V.
;
Nikolaev, V. I.
...
ECS Journal of Solid State Science and Technology. 12 (2023) 4 - p. 045002 , 2023
Link:
https://doi.org/10.1149/..
?
10
Electrical and Structural Properties of Two-Inch Diameter (..:
Nikolaev, V. I.
;
Polyakov, A. Y.
;
Stepanov, S. I.
...
ECS Journal of Solid State Science and Technology. 11 (2022) 11 - p. 115002 , 2022
Link:
https://doi.org/10.1149/..
?
11
Parasitic p–n junctions formed at V-pit defects in p-GaN:
Vergeles, P. S.
;
Yakimov, E. B.
;
Polyakov, A. Y.
...
Journal of Applied Physics. 129 (2021) 15 - p. , 2021
Link:
https://doi.org/10.1063/..
?
12
Crystal orientation dependence of deep level spectra in pro..:
Polyakov, A. Y.
;
Smirnov, N. B.
;
Shchemerov, I. V.
...
Journal of Applied Physics. 130 (2021) 3 - p. , 2021
Link:
https://doi.org/10.1063/..
?
13
Pulsed fast reactor neutron irradiation effects in Si doped..:
Polyakov, A Y
;
Smirnov, N B
;
Shchemerov, I V
...
Journal of Physics D: Applied Physics. 53 (2020) 27 - p. 274001 , 2020
Link:
https://doi.org/10.1088/..
?
14
Editors' Choice—Electrical Properties and Deep Traps in α-G..:
Polyakov, A. Y.
;
Nikolaev, V. I.
;
Stepanov, S. I.
...
ECS Journal of Solid State Science and Technology. 9 (2020) 4 - p. 045003 , 2020
Link:
https://doi.org/10.1149/..
?
15
Deep traps in InGaN/GaN single quantum well structures grow..:
Polyakov, A.Y.
;
Haller, C.
;
Butté, R.
...
Journal of Alloys and Compounds. 845 (2020) - p. 156269 , 2020
Link:
https://doi.org/10.1016/..
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