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Kohen, David
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1

Metal-Semiconductor-Metal Photodetectors on a GeSn-on-Insul..:

Son, Bongkwon ; Lin, Yiding ; Lee, Kwang Hong...
IEEE Photonics Journal.  14 (2022)  3 - p. 1-6 , 2022
Link: https://doi.org/10.1109/..
 
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2

Epitaxial Growth of Ga-doped SiGe for Reduction of Contact ..:

Margetis, Joe ; Kohen, David ; Porret, Clement...
ECS Transactions.  93 (2019)  1 - p. 7-10 , 2019
Link: https://doi.org/10.1149/..
 
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3

Low temperature epitaxial growth of Ge:B and Ge0.99Sn0.01:B..:

Vohra, Anurag ; Porret, Clement ; Kohen, David...
Japanese Journal of Applied Physics.  58 (2019)  SB - p. SBBA04 , 2019
Link: https://doi.org/10.7567/..
 
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4

(Invited) Very Low Temperature Epitaxy of Group-IV Semicond..:

Porret, Clement ; Hikavyy, Andriy Yakovitch ; Gomez Granados, Juan Fernando...
ECS Transactions.  86 (2018)  7 - p. 163-175 , 2018
Link: https://doi.org/10.1149/..
 
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5

Enhanced B doping in CVD-grown GeSn:B using B δ-doping laye..:

Kohen, David ; Vohra, Anurag ; Loo, Roger...
Journal of Crystal Growth.  483 (2018)  - p. 285-290 , 2018
Link: https://doi.org/10.1016/..
 
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6

Epitaxial GeSn: impact of process conditions on material qu..:

Loo, Roger ; Shimura, Yosuke ; Ike, Shinichi...
Semiconductor Science and Technology.  33 (2018)  11 - p. 114010 , 2018
Link: https://doi.org/10.1088/..
 
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7

Abrupt SiGe-to-Si interface: influence of chemical vapor de..:

Kohen, David ; D'Costa, Vijay ; Bhargava, Nupur.
Semiconductor Science and Technology.  33 (2018)  10 - p. 104003 , 2018
Link: https://doi.org/10.1088/..
 
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8

Fundamentals of Ge 1−x Sn x and Si y Ge 1−x-y Sn x RPCVD ep..:

Margetis, Joe ; Mosleh, Aboozar ; Ghetmiri, Seyed Amir...
Materials Science in Semiconductor Processing.  70 (2017)  - p. 38-43 , 2017
Link: https://doi.org/10.1016/..
 
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9

Preventing phase separation in MOCVD-grown InAlAs compositi..:

Kohen, David ; Nguyen, Xuan Sang ; Made, Riko I....
Journal of Crystal Growth.  478 (2017)  - p. 64-70 , 2017
Link: https://doi.org/10.1016/..
 
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10

Heteroepitaxial growth of In0.30Ga0.70As high-electron mobi..:

Kohen, David ; Nguyen, Xuan Sang ; Yadav, Sachin...
AIP Advances.  6 (2016)  8 - p. 085106 , 2016
Link: https://doi.org/10.1063/..
 
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11

Direct MOCVD epitaxy of GaAsP on SiGe virtual substrate wit..:

Wang, Bing ; Wang, Cong ; Kohen, David A....
Journal of Crystal Growth.  441 (2016)  - p. 78-83 , 2016
Link: https://doi.org/10.1016/..
 
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12

(Invited) Selective Epitaxial Growth of High-P Si:P for Sou..:

Rosseel, Erik ; Dhayalan, Sathish Kumar ; Hikavyy, Andriy Yakovitch...
ECS Transactions.  75 (2016)  8 - p. 347-359 , 2016
Link: https://doi.org/10.1149/..
 
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13

Integration of GaAs, GaN, and Si-CMOS on a common 200 mm Si..:

Lee, Kwang Hong ; Bao, Shuyu ; Zhang, Li...
Applied Physics Express.  9 (2016)  8 - p. 086501 , 2016
Link: https://doi.org/10.7567/..
 
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14

The role of AsH3 partial pressure on anti-phase boundary in..:

Kohen, David ; Bao, Shuyu ; Lee, Kwang Hong...
Journal of Crystal Growth.  421 (2015)  - p. 58-65 , 2015
Link: https://doi.org/10.1016/..
 
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15

Cu2ZnSn(S1−xSex)4 thin films for photovoltaic applications:..:

Altamura, Giovanni ; Grenet, Louis ; Bougerol, Catherine...
Journal of Alloys and Compounds.  588 (2014)  - p. 310-315 , 2014
Link: https://doi.org/10.1016/..
 
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