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Kon'kov, O. I.
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1
Compact Calibration Source of Neutrons on the Basis of the ..:
Bazlov, N. V.
;
Bubnov, E. F.
;
Derbin, A. V.
...
Physics of Atomic Nuclei. 85 (2022) 6 - p. 931-935 , 2022
Link:
https://doi.org/10.1134/..
?
2
Influence of α-particles irradiation on the properties and ..:
Bakhlanov, S V
;
Bazlov, N V
;
Chernobrovkin, I D
...
Journal of Physics: Conference Series. 2103 (2021) 1 - p. 012139 , 2021
Link:
https://doi.org/10.1088/..
?
3
Degradation of silicon detectors under long-term irradiatio..:
Bakhlanov, S V
;
Derbin, A V
;
Drachnev, I S
...
Journal of Physics: Conference Series. 2103 (2021) 1 - p. 012138 , 2021
Link:
https://doi.org/10.1088/..
?
4
High-Voltage 4H-SiC Schottky Diodes with Field-Plate Edge T..:
Ivanov, P. A.
;
Lebedeva, N. M.
;
Il'inskaya, N. D.
...
Semiconductors. 55 (2021) 2 - p. 243-249 , 2021
Link:
https://doi.org/10.1134/..
?
5
High-Voltage 4H-SiC-Based Avalanche Diodes with a Negative ..:
Ivanov, P. A.
;
Lebedeva, N. M.
;
Il'inskaya, N. D.
..
Semiconductors. 55 (2021) 4 - p. 405-409 , 2021
Link:
https://doi.org/10.1134/..
?
6
The Effect of Texturing of Silicon Wafer Surfaces for Solar..:
Shpeizman, V. V.
;
Nikolaev, V. I.
;
Pozdnyakov, A. O.
...
Technical Physics. 65 (2020) 7 - p. 1123-1129 , 2020
Link:
https://doi.org/10.1134/..
?
7
Micro-profiling of 4H-SiC by Dry Etching to Form a Schottky..:
Il'inskaya, N. D.
;
Lebedeva, N. M.
;
Zadiranov, Yu. M.
...
Semiconductors. 54 (2020) 1 - p. 144-149 , 2020
Link:
https://doi.org/10.1134/..
?
8
Photoelectric properties of MIS structures on high-resistiv..:
Bazlov, N V
;
Danishevskii, A M
;
Derbin, A V
...
Journal of Physics: Conference Series. 1697 (2020) 1 - p. 012181 , 2020
Link:
https://doi.org/10.1088/..
?
9
Si(Li) detector with ultra-thin entrance window on the diff..:
Bazlov, N. V.
;
Derbin, A. V.
;
Drachnev, I. S.
...
Journal of Physics: Conference Series. 1400 (2019) 5 - p. 055056 , 2019
Link:
https://doi.org/10.1088/..
?
10
The nanosecond studies of granular carbon nanostructures ba..:
Faradzheva, M P
;
Prikhodko, A V
;
Konkov, O I
.
Journal of Physics: Conference Series. 1124 (2018) - p. 081004 , 2018
Link:
https://doi.org/10.1088/..
?
11
4H-SiC Based Subnanosecond (150 ps) High-Voltage (1600 V) C..:
Ivanov, P. A.
;
Kon'kov, O. I.
;
Samsonova, T. P.
.
Technical Physics Letters. 44 (2018) 2 - p. 87-89 , 2018
Link:
https://doi.org/10.1134/..
?
12
Resistance of 4H-SiC Schottky barriers at high forward-curr..:
Ivanov, P. A.
;
Samsonova, T. P.
;
Il'inskaya, N. D.
...
Semiconductors. 49 (2015) 7 - p. 930-934 , 2015
Link:
https://doi.org/10.1134/..
?
13
Dynamic characteristics of 4H-SiC drift step recovery diode:
Ivanov, P. A.
;
Kon'kov, O. I.
;
Samsonova, T. P.
..
Semiconductors. 49 (2015) 11 - p. 1511-1515 , 2015
Link:
https://doi.org/10.1134/..
?
14
Modification of the structure and hydrogen content of amorp..:
Emelyanov, A. V.
;
Kazanskii, A. G.
;
Kashkarov, P. K.
...
Technical Physics Letters. 40 (2014) 2 - p. 141-144 , 2014
Link:
https://doi.org/10.1134/..
?
15
The photosensitivity of amorphous-crystalline silicon heter..:
Danishevskii, A. M.
;
Kotina, I. M.
;
Kon'kov, O. I.
..
Technical Physics Letters. 40 (2014) 5 - p. 397-400 , 2014
Link:
https://doi.org/10.1134/..
1-15