E-LIB Suche - Ergebnisse für: Konczewicz, L

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Physica status solidi

Volume 86, Number 1: November 16 Physica status solidi ; Volume 86, Number 1, A

Afanasiev, A. M ; Aladashvili, D. I ; Aldzhanov, M. A... - Reprint 2021 . , [2022]

Link: https://doi.org/10.1515/..

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Electrical transport properties of highly doped N-type GaN ..:

Konczewicz, L ; Litwin-Staszewska, E ; Zajac, M...
Semiconductor Science and Technology. 37 (2022) 5 - p. 055012 , 2022

Link: https://doi.org/10.1088/..

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p-type conductivity in GaN:Zn monocrystals grown by ammonot..:

Zajac, M. ; Konczewicz, L. ; Litwin-Staszewska, E....
Journal of Applied Physics. 129 (2021) 13 - p. , 2021

Link: https://doi.org/10.1063/..

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High temperature electrical transport properties of MBE-gro..:

Konczewicz, L. ; Juillaguet, S. ; Litwin-Staszewska, E....
Journal of Applied Physics. 128 (2020) 8 - p. , 2020

Link: https://doi.org/10.1063/..

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High Temperature Annealing of MBE-grown Mg-doped GaN:

Contreras, S ; Konczewicz, L ; Peyre, H...
Journal of Physics: Conference Series. 864 (2017) - p. 012018 , 2017

Link: https://doi.org/10.1088/..

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Optical investigations and strain effect in AlGaN/GaN epita..:

Jayasakthi, M. ; Juillaguet, S. ; Peyre, H....
Journal of Physics: Conference Series. 864 (2017) - p. 012021 , 2017

Link: https://doi.org/10.1088/..

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Influence of AlN thickness on AlGaN epilayer grown by MOCVD:

Jayasakthi, M. ; Juillaguet, S. ; Peyre, H....
Superlattices and Microstructures. 98 (2016) - p. 515-521 , 2016

Link: https://doi.org/10.1016/..

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Midwave infrared InAs/GaSb superlattice photodiode with a d..:

Delmas, M. ; Rodriguez, J.B. ; Taalat, R....
Infrared Physics & Technology. 70 (2015) - p. 76-80 , 2015

Link: https://doi.org/10.1016/..

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Pressure-induced penetration of guest molecules in high-sil..:

Arletti, R. ; Leardini, L. ; Vezzalini, G....
Physical Chemistry Chemical Physics. 17 (2015) 37 - p. 24262-24274 , 2015

Link: https://doi.org/10.1039/..

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High-pressure polymorph ofLuFe2O4with room-temperature anti..:

Damay, F. ; Poienar, M. ; Hervieu, M....
Physical Review B. 91 (2015) 21 - p. , 2015

Link: https://doi.org/10.1103/..

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Advantage of In- over N-polarity for disclosure of p-type c..:

Dmowski, L. H. ; Baj, M. ; Wang, X. Q....
Journal of Applied Physics. 115 (2014) 17 - p. , 2014

Link: https://doi.org/10.1063/..

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Magnetotransport studies of AlGaN/GaN heterostructures with..:

Desrat, W. ; Contreras, S. ; Konczewicz, L....
Journal of Applied Physics. 114 (2013) 2 - p. , 2013

Link: https://doi.org/10.1063/..

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Pressure studies of multicarrier conduction in undoped InN ..:

Dmowski, L. H. ; Konczewicz, L. ; Suski, T....
physica status solidi (b). 250 (2013) 4 - p. 746-749 , 2013

Link: https://doi.org/10.1002/..

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Growth of GaN:Mg crystals by high nitrogen pressure solutio..:

Grzegory, I. ; Boćkowski, M. ; łucznik, B....
Journal of Crystal Growth. 350 (2012) 1 - p. 50-55 , 2012

Link: https://doi.org/10.1016/..

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Coexistence of free holes and electrons in InN:Mg with In- ..:

Dmowski, L. H. ; Baj, M. ; Konczewicz, L....
Journal of Applied Physics. 111 (2012) 9 - p. , 2012

Link: https://doi.org/10.1063/..