E-LIB Suche - Ergebnisse für: Konishi, Kazuya

1

Split-Gate CSTBT™ for Suppression of Negative Gate Capacita..:

, In: 2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD),

Sakaguchi, Kosuke ; Konishi, Kazuya ; Kobayashi, Ryosuke.. - p. 40-43 , 2024

Link: https://doi.org/10.1109/..

2

1.2 kV-Class Double Gate CSTBT™ with Carrier Profile Contro..:

, In: 2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD),

Noguchi, Munetaka ; Inoue, Atsufumi ; Onda, Kohei... - p. 44-47 , 2024

Link: https://doi.org/10.1109/..

3

Separate-Bottom Player CSTBT™ for Approaching Turn-off Swit..:

, In: 2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD),

Konishi, Kazuya ; Nitta, Tetsuya ; Tamaki, Tomohiro. - p. 155-158 , 2023

Link: https://doi.org/10.1109/..

4

Targeting acidic pre-metastatic niche in lungs by pH low in..:

Matsui, Toma ; Toda, Yuki ; Sato, Haruka...
Frontiers in Oncology. 13 (2023) - p. , 2023

Link: https://doi.org/10.3389/..

5

TCAD Simulation Modeling of Mold Epoxy Resin Applied for En..:

, In: 2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD),

Tamaki, Tomohiro ; Ebihara, Kohei ; Konishi, Kazuya... - p. 286-289 , 2023

Link: https://doi.org/10.1109/..

6

Device Design Direction of CSTBT for Low Loss and EMI Noise:

Nishi, Koichi ; Konishi, Kazuya ; Tadakuma, Toshiya..
IEEE Transactions on Electron Devices. 70 (2023) 12 - p. 6144-6150 , 2023

Link: https://doi.org/10.1109/..

7

Reduction of Junction Temperature with Local Lifetime Contr..:

, In: 2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD),

Sakaguchi, Kosuke ; Konishi, Kazuya ; Eguchi, Keisuke. - p. 215-218 , 2023

Link: https://doi.org/10.1109/..

8

Split-Dummy-Active CSTBT™ for Improving Recovery dV/dt and ..:

, In: 2022 IEEE 34th International Symposium on Power Semiconductor Devices and ICs (ISPSD),

Konishi, Kazuya ; Nishi, Koichi ; Sako, Kohei. - p. 273-276 , 2022

Link: https://doi.org/10.1109/..

9

Experimental Demonstration of Ruggedness in 13 kV SiC-IGBT:

Konishi, Kazuya ; Hamada, Kenji ; Okabe, Hiroaki...
Materials Science Forum. 1004 (2020) - p. 905-910 , 2020

Link: https://doi.org/10.4028/..

10

Investigation of Dislocations Inducing Leakage Current on S..:

Nakanishi, Yosuke ; Noguchi, Tomoaki ; Nakamura, Takuyo...
Materials Science Forum. 1004 (2020) - p. 451-457 , 2020

Link: https://doi.org/10.4028/..

11

Direct observation and three dimensional structural analysi..:

Konishi, Kazuya ; Nakamura, Yu ; Nagae, Akemi...
Japanese Journal of Applied Physics. 59 (2019) 1 - p. 011001 , 2019

Link: https://doi.org/10.7567/..

12

Impact of Stripe Trench-Gate Structure for 4H-SiC Trench MO..:

Fukui, Yutaka ; Sugawara, Katsutoshi ; Adachi, Kohei...
Materials Science Forum. 924 (2018) - p. 761-764 , 2018

Link: https://doi.org/10.4028/..

13

Investigation of Stacking Faults Affecting on Reverse Leaka..:

Hasegawa, Junichi ; Konishi, Kazuya ; Nakamura, Yu...
Materials Science Forum. 778-780 (2014) - p. 828-831 , 2014

Link: https://doi.org/10.4028/..

14

Driving Force of Stacking Fault Expansion in 4H-SiC PN Diod..:

Konishi, Kazuya ; Yamamoto, Shigehisa ; Nakata, Shuhei..
Materials Science Forum. 778-780 (2014) - p. 342-345 , 2014

Link: https://doi.org/10.4028/..

15

Stacking fault expansion from basal plane dislocations conv..:

Konishi, Kazuya ; Yamamoto, Shigehisa ; Nakata, Shuhei...
Journal of Applied Physics. 114 (2013) 1 - p. , 2013

Link: https://doi.org/10.1063/..