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Kordina, Olof
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Online (69)
Mediatypes
Articles (Online) (57)
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1
Impact of in situ NH3 pre-treatment of LPCVD SiN passivatio..:
Chen, Ding-Yuan
;
Persson, Axel R
;
Wen, Kai-Hsin
...
Semiconductor Science and Technology. 37 (2022) 3 - p. 035011 , 2022
Link:
https://doi.org/10.1088/..
?
2
Impact of an AlGaN spike in the buffer in 0.15 μm AlGaN/GaN..:
Gao, Zhan
;
Rampazzo, Fabiana
;
Meneghini, Matteo
...
Microelectronics Reliability. 126 (2021) - p. 114318 , 2021
Link:
https://doi.org/10.1016/..
?
3
N-polar AlN nucleation layers grown by hot-wall MOCVD on Si..:
Zhang, Hengfang
;
Paskov, Plamen P.
;
Kordina, Olof
..
Physica B: Condensed Matter. 580 (2020) - p. 411819 , 2020
Link:
https://doi.org/10.1016/..
?
4
Transmorphic epitaxial growth of AlN nucleation layers on S..:
Lu, Jun
;
Chen, Jr-Tai
;
Dahlqvist, Martin
...
Applied Physics Letters. 115 (2019) 22 - p. , 2019
Link:
https://doi.org/10.1063/..
?
5
A versatile low-resistance ohmic contact process with ohmic..:
Lin, Yen-Ku
;
Bergsten, Johan
;
Leong, Hector
...
Semiconductor Science and Technology. 33 (2018) 9 - p. 095019 , 2018
Link:
https://doi.org/10.1088/..
?
6
Erratum: "A GaN–SiC hybrid material for high-frequency and ..:
Chen, Jr-Tai
;
Bergsten, Johan
;
Lu, Jun
...
Applied Physics Letters. 113 (2018) 7 - p. , 2018
Link:
https://doi.org/10.1063/..
?
7
A GaN–SiC hybrid material for high-frequency and power elec..:
Chen, Jr-Tai
;
Bergsten, Johan
;
Lu, Jun
...
Applied Physics Letters. 113 (2018) 4 - p. , 2018
Link:
https://doi.org/10.1063/..
?
8
Growth Mechanism of SiC Chemical Vapor Deposition: Adsorpti..:
Sukkaew, Pitsiri
;
Kalered, Emil
;
Janzén, Erik
...
The Journal of Physical Chemistry C. 122 (2017) 1 - p. 648-661 , 2017
Link:
https://doi.org/10.1021/..
?
9
Silicon Chemistry in Fluorinated Chemical Vapor Deposition ..:
Stenberg, Pontus
;
Sukkaew, Pitsiri
;
Farkas, Ildiko
...
The Journal of Physical Chemistry C. 121 (2017) 5 - p. 2711-2720 , 2017
Link:
https://doi.org/10.1021/..
?
10
Ab Initio Study of Growth Mechanism of 4H–SiC: Adsorption a..:
Sukkaew, Pitsiri
;
Danielsson, Örjan
;
Kordina, Olof
..
The Journal of Physical Chemistry C. 121 (2017) 2 - p. 1249-1256 , 2017
Link:
https://doi.org/10.1021/..
?
11
Vector Magnetometry Using Silicon Vacancies in4H-SiC Under ..:
Niethammer, Matthias
;
Widmann, Matthias
;
Lee, Sang-Yun
...
Physical Review Applied. 6 (2016) 3 - p. , 2016
Link:
https://doi.org/10.1103/..
?
12
Deep levels in as-grown and electron-irradiated n-type GaN ..:
Duc, Tran Thien
;
Pozina, Galia
;
Son, Nguyen Tien
...
Journal of Applied Physics. 119 (2016) 9 - p. , 2016
Link:
https://doi.org/10.1063/..
?
13
Carbon-Doped GaN on SiC Materials for Low-Memory-Effect Dev..:
Chen, Jr-Tai
;
Janzén, Erik
;
Rorsman, Niklas
...
ECS Transactions. 75 (2016) 12 - p. 61-65 , 2016
Link:
https://doi.org/10.1149/..
?
14
Optical properties and Zeeman spectroscopy of niobium in si..:
Gällström, Andreas
;
Magnusson, Björn
;
Leone, Stefano
...
Physical Review B. 92 (2015) 7 - p. , 2015
Link:
https://doi.org/10.1103/..
?
15
Thermochemical Properties of Halides and Halohydrides of Si..:
Sukkaew, Pitsiri
;
Ojamäe, Lars
;
Kordina, Olof
..
ECS Journal of Solid State Science and Technology. 5 (2015) 2 - p. P27-P35 , 2015
Link:
https://doi.org/10.1149/..
1-15