E-LIB Suche - Ergebnisse für: Koukab, A.

1

Radiation response of 28 nm CMOS transistors at high proton..:

Termo, G. ; Borghello, G. ; Faccio, F....
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 1065 (2024) - p. 169497 , 2024

Link: https://doi.org/10.1016/..

2

High-rate, high-resolution single photon X-ray imaging: Med..:

Sriskaran, V. ; Alozy, J. ; Ballabriga, R....
Journal of Instrumentation. 19 (2024) 2 - p. P02024 , 2024

Link: https://doi.org/10.1088/..

3

The Timepix4 analog front-end design: Lessons learnt on fun..:

Ballabriga, R. ; Alozy, J.A. ; Bandi, F.N....
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 1045 (2023) - p. 167489 , 2023

Link: https://doi.org/10.1016/..

4

Fab-to-fab and run-to-run variability in 130 nm and 65 nm C..:

Termo, G. ; Borghello, G. ; Faccio, F....
Journal of Instrumentation. 18 (2023) 1 - p. C01061 , 2023

Link: https://doi.org/10.1088/..

5

New architecture for the analog front-end of Medipix4:

Sriskaran, V. ; Alozy, J. ; Ballabriga, R....
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 978 (2020) - p. 164412 , 2020

Link: https://doi.org/10.1016/..

6

A dynamic operation of a PIN photodiode:

Okhonin, S. ; Gureev, M. ; Sallin, D....
Applied Physics Letters. 106 (2015) 3 - p. , 2015

Link: https://doi.org/10.1063/..

7

On performance scaling and speed of junctionless transistor:

Koukab, A. ; Jazaeri, F. ; Sallese, J.-M.
Solid-State Electronics. 79 (2013) - p. 18-21 , 2013

Link: https://doi.org/10.1016/..

8

Analytical model for ultra-thin body junctionless symmetric..:

Jazaeri, F. ; Barbut, L. ; Koukab, A..
Solid-State Electronics. 82 (2013) - p. 103-110 , 2013

Link: https://doi.org/10.1016/..

9

Improved bias–thermal-stress method for the insulator charg..:

Koukab, A ; Bath, A ; Thévenin, P
Microelectronics Journal. 31 (2000) 8 - p. 647-651 , 2000

Link: https://doi.org/10.1016/..

10

A simple technique for hot-carrier-induced interface state ..:

Koukab, A. ; Hoffmann, A. ; Bath, A..
Solid-State Electronics. 43 (1999) 3 - p. 641-644 , 1999

Link: https://doi.org/10.1016/..

11

Simple method for accurate determination of the mean interf..:

Koukab, A ; Bath, A ; Baehr, O
Microelectronic Engineering. 49 (1999) 3-4 - p. 211-216 , 1999

Link: https://doi.org/10.1016/..

12

Procedure to minimize interface-state errors in MIS doping ..:

Koukab, A ; Bath, A
Solid-State Electronics. 41 (1997) 4 - p. 515-518 , 1997

Link: https://doi.org/10.1016/..

13

Preparation of boron nitride thin films by microwave plasma..:

Baehr, O. ; Thévenin, P. ; Bath, A....
Materials Science and Engineering: B. 46 (1997) 1-3 - p. 101-104 , 1997

Link: https://doi.org/10.1016/..

14

An improved high frequency C-V method for interface state a..:

Koukab, A ; Bath, A ; Losson, E
Solid-State Electronics. 41 (1997) 4 - p. 635-641 , 1997

Link: https://doi.org/10.1016/..

15

Characteristics and ultra-high total ionizing dose response..:

Termo, Gennaro ; Borghello, Giulio ; Faccio, Federico...
Journal of Instrumentation. 19 (2024) 3 - p. C03039 , 2024

Link: https://doi.org/10.1088/..