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Kräutle, H.
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1

Damage characterisation of InP after reactive ion etching u..:

Gottwald, P ; Kräutle, H ; Szentpáli, B..
Solid-State Electronics.  41 (1997)  4 - p. 539-545 , 1997
Link: https://doi.org/10.1016/..
 
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2

Transmission electron microscopy study of rapid thermally a..:

Ressel, P. ; Österle, W. ; Urban, I....
Journal of Applied Physics.  80 (1996)  7 - p. 3910-3914 , 1996
Link: https://doi.org/10.1063/..
 
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3

Secondary ion mass spectroscopy study of Zn or Cd implanted..:

Ressel, P. ; Strusny, H. ; Trapp, M...
Applied Physics Letters.  65 (1994)  9 - p. 1174-1176 , 1994
Link: https://doi.org/10.1063/..
 
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4

Ion implantation of zirconium and hafnium in InP and GaAs:

Knecht, A. ; Kuttler, M. ; Scheffler, H....
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms.  80-81 (1993)  - p. 683-686 , 1993
Link: https://doi.org/10.1016/..
 
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5

Low temperature deposition of SiO2 and PSG using SiH4, N2O ..:

Riemenschneider, R. ; DasGupta, N. ; Schütz, R...
Applied Surface Science.  69 (1993)  1-4 - p. 277-280 , 1993
Link: https://doi.org/10.1016/..
 
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6

Defect-induced redistribution of Fe- or Ti-implanted and an..:

Ullrich, H. ; Knecht, A. ; Bimberg, D...
Journal of Applied Physics.  72 (1992)  8 - p. 3514-3521 , 1992
Link: https://doi.org/10.1063/..
 
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7

Redistribution of Fe and Ti implanted into InP:

Ullrich, H. ; Knecht, A. ; Bimberg, D...
Journal of Applied Physics.  70 (1991)  5 - p. 2604-2609 , 1991
Link: https://doi.org/10.1063/..
 
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8

Redistribution of Cr in GaAs:Cr and of V in GaAs:V after im..:

Kütt, W. ; Bimberg, D. ; Maier, M....
Applied Physics Letters.  46 (1985)  5 - p. 489-491 , 1985
Link: https://doi.org/10.1063/..
 
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9

Effect of low energy Ar+ ion implantation on silicon surfac..:

Ashok, S. ; Kräutle, H. ; Beneking, H..
Thin Solid Films.  126 (1985)  3-4 - p. 251-256 , 1985
Link: https://doi.org/10.1016/..
 
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10

Ohmic contacts on n- and p-layers of GaAs using laser-induc..:

Kräutle, H. ; Wachenschwanz, D.
Solid-State Electronics.  28 (1985)  6 - p. 601-603 , 1985
Link: https://doi.org/10.1016/..
 
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11

GaAs mesa diodes made by direct-writing laser stimulated MO..:

Roth, W. ; Beneking, H. ; Krings, A..
Microelectronics Journal.  15 (1984)  1 - p. 26-29 , 1984
Link: https://doi.org/10.1016/..
 
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12

Comparison of ion implanted Be and Cd as p-type dopants in ..:

Vescan, L. ; Selders, J. ; Maier, M...
Journal of Crystal Growth.  67 (1984)  2 - p. 353-357 , 1984
Link: https://doi.org/10.1016/..
 
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13

Effect of argon ion implantation dose on silicon Schottky b..:

Ashok, S. ; Kräutle, H. ; Beneking, H.
Applied Physics Letters.  45 (1984)  4 - p. 431-433 , 1984
Link: https://doi.org/10.1063/..
 
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14

Diffusion of Ion‐Implanted Arsenic in Thermally Grown SiO2 ..:

Singh, R. ; Maier, M. ; Kräutle, H...
Journal of The Electrochemical Society.  131 (1984)  11 - p. 2645-2651 , 1984
Link: https://doi.org/10.1149/..
 
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15

Heat treatment induced redistribution of vanadium in semi-i..:

Kütt, W. ; Bimberg, D. ; Maier, M....
Applied Physics Letters.  44 (1984)  11 - p. 1078-1080 , 1984
Link: https://doi.org/10.1063/..
 
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