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Kräutle, H.
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Online (36)
Mediatypes
Articles (Online) (33)
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1
Damage characterisation of InP after reactive ion etching u..:
Gottwald, P
;
Kräutle, H
;
Szentpáli, B
..
Solid-State Electronics. 41 (1997) 4 - p. 539-545 , 1997
Link:
https://doi.org/10.1016/..
?
2
Transmission electron microscopy study of rapid thermally a..:
Ressel, P.
;
Österle, W.
;
Urban, I.
...
Journal of Applied Physics. 80 (1996) 7 - p. 3910-3914 , 1996
Link:
https://doi.org/10.1063/..
?
3
Secondary ion mass spectroscopy study of Zn or Cd implanted..:
Ressel, P.
;
Strusny, H.
;
Trapp, M.
..
Applied Physics Letters. 65 (1994) 9 - p. 1174-1176 , 1994
Link:
https://doi.org/10.1063/..
?
4
Ion implantation of zirconium and hafnium in InP and GaAs:
Knecht, A.
;
Kuttler, M.
;
Scheffler, H.
...
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 80-81 (1993) - p. 683-686 , 1993
Link:
https://doi.org/10.1016/..
?
5
Low temperature deposition of SiO2 and PSG using SiH4, N2O ..:
Riemenschneider, R.
;
DasGupta, N.
;
Schütz, R.
..
Applied Surface Science. 69 (1993) 1-4 - p. 277-280 , 1993
Link:
https://doi.org/10.1016/..
?
6
Defect-induced redistribution of Fe- or Ti-implanted and an..:
Ullrich, H.
;
Knecht, A.
;
Bimberg, D.
..
Journal of Applied Physics. 72 (1992) 8 - p. 3514-3521 , 1992
Link:
https://doi.org/10.1063/..
?
7
Redistribution of Fe and Ti implanted into InP:
Ullrich, H.
;
Knecht, A.
;
Bimberg, D.
..
Journal of Applied Physics. 70 (1991) 5 - p. 2604-2609 , 1991
Link:
https://doi.org/10.1063/..
?
8
Redistribution of Cr in GaAs:Cr and of V in GaAs:V after im..:
Kütt, W.
;
Bimberg, D.
;
Maier, M.
...
Applied Physics Letters. 46 (1985) 5 - p. 489-491 , 1985
Link:
https://doi.org/10.1063/..
?
9
Effect of low energy Ar+ ion implantation on silicon surfac..:
Ashok, S.
;
Kräutle, H.
;
Beneking, H.
.
Thin Solid Films. 126 (1985) 3-4 - p. 251-256 , 1985
Link:
https://doi.org/10.1016/..
?
10
Ohmic contacts on n- and p-layers of GaAs using laser-induc..:
Kräutle, H.
;
Wachenschwanz, D.
Solid-State Electronics. 28 (1985) 6 - p. 601-603 , 1985
Link:
https://doi.org/10.1016/..
?
11
GaAs mesa diodes made by direct-writing laser stimulated MO..:
Roth, W.
;
Beneking, H.
;
Krings, A.
.
Microelectronics Journal. 15 (1984) 1 - p. 26-29 , 1984
Link:
https://doi.org/10.1016/..
?
12
Comparison of ion implanted Be and Cd as p-type dopants in ..:
Vescan, L.
;
Selders, J.
;
Maier, M.
..
Journal of Crystal Growth. 67 (1984) 2 - p. 353-357 , 1984
Link:
https://doi.org/10.1016/..
?
13
Effect of argon ion implantation dose on silicon Schottky b..:
Ashok, S.
;
Kräutle, H.
;
Beneking, H.
Applied Physics Letters. 45 (1984) 4 - p. 431-433 , 1984
Link:
https://doi.org/10.1063/..
?
14
Diffusion of Ion‐Implanted Arsenic in Thermally Grown SiO2 ..:
Singh, R.
;
Maier, M.
;
Kräutle, H.
..
Journal of The Electrochemical Society. 131 (1984) 11 - p. 2645-2651 , 1984
Link:
https://doi.org/10.1149/..
?
15
Heat treatment induced redistribution of vanadium in semi-i..:
Kütt, W.
;
Bimberg, D.
;
Maier, M.
...
Applied Physics Letters. 44 (1984) 11 - p. 1078-1080 , 1984
Link:
https://doi.org/10.1063/..
1-15