Kravchenko, Ivan
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1

Vertical GaN Superjunction Diode on Sapphire with Kilovolt ..:

, In: 2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD),
Porter, Matthew A. ; Ma, Yunwei ; Qin, Yuan... - p. 331-334 , 2024
 
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1 kV Self-Aligned Vertical GaN Superjunction Diode:

Ma, Yunwei ; Porter, Matthew ; Qin, Yuan...
IEEE Electron Device Letters.  45 (2024)  1 - p. 12-15 , 2024
 
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Implanted Guard Ring Edge Termination With Avalanche Capabi..:

Wang, Yifan ; Porter, Matthew ; Xiao, Ming...
IEEE Transactions on Electron Devices.  71 (2024)  3 - p. 1481-1487 , 2024
 
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9

1 kV GaN-on-Si Quasi-Vertical Schottky Rectifier:

Qin, Yuan ; Xiao, Ming ; Zhang, Ruizhe...
IEEE Electron Device Letters.  44 (2023)  7 - p. 1052-1055 , 2023
 
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2 kV, 0.7 mΩ•cm2 Vertical Ga2O3 Superjunction Schottky Rect..:

, In: 2023 International Electron Devices Meeting (IEDM),
Qin, Yuan ; Porter, Matthew ; Xiao, Ming... - p. 1-4 , 2023
 
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14

Demonstration of Large-Size Vertical Ga2O3 Schottky Barrier..:

Ji, Mihee ; Taylor, Neil R. ; Kravchenko, Ivan...
IEEE Transactions on Power Electronics.  36 (2021)  1 - p. 41-44 , 2021
 
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Large area vertical Ga2O3 Schottky diodes for X-ray detecti..:

Taylor, Neil R. ; Ji, Mihee ; Pan, Lei...
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment.  1013 (2021)  - p. 165664 , 2021
 
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