E-LIB Suche - Ergebnisse für: Krispin, P.

1

Physica status solidi

Volume 69, Number 1: January 16 Physica status solidi ; Volume 69, Number 1, A

Aarna, H. A ; Abdelmohsen, N ; Abdullaeva, S. G... - Reprint 2021 . , [2022]

Link: https://doi.org/10.1515/..

2

Physica status solidi

Volume 109, Number 2: October 16 Physica status solidi ; Volume 109, Number 2, A

Abdellaoui, A ; Agafov, B. L ; Almodovae, N. Suarez... - Reprint 2021 . , [2022]

Link: https://doi.org/10.1515/..

3

Physica status solidi

Volume 84, Number 2: August 16 Physica status solidi ; Volume 84, Number 2, A

Alexandrova, S ; Altshuller, G. B ; Anh, Tran Kim... - Reprint 2021 . , [2022]

Link: https://doi.org/10.1515/..

4

Physica status solidi

Volume 25, Number 1: January 1 Physica status solidi ; Volume 25, Number 1

Abdullaev, G. B ; Alieva, M. Kh ; Anderson, E. E... - Reprint 2021 . , [2022]

Link: https://doi.org/10.1515/..

5

Physica status solidi

Volume 91, Number 1: September 16 Physica status solidi ; Volume 91, Number 1, A

Abass, A. K ; Abdullin, Kh. A ; Adhikari, M... - Reprint 2021 . , [2022]

Link: https://doi.org/10.1515/..

6

Physica status solidi

Volume 56, Number 1: November 16 Physica status solidi ; Volume 56, Number 1, A

Acharya, S ; Aldea, M. L ; Amelinckx, S... - Reprint 2021 . , [2021]

Link: https://doi.org/10.1515/..

7

Physica status solidi

Volume 5, Number 3: 1964 Physica status solidi ; Volume 5, Number 3

Ameltnckx, S ; Balkanski, M ; Blank, H... - Reprint 2021 . , [2021]

Link: https://doi.org/10.1515/..

8

Physica status solidi

Volume 15, Number 1: 1966 Physica status solidi ; Volume 15, Number 1

Abajs, S ; Akhundov, G.A ; Albrecht, G... - Reprint 2021 . , [2021]

Link: https://doi.org/10.1515/..

9

Deep levels in GaAs/Al0.78Ga0.22As heterostructures:

Qurashi, Umar S. ; Naz, Nazir A. ; Naeem Khan, M....
Physica B: Condensed Matter. 401-402 (2007) - p. 266-269 , 2007

Link: https://doi.org/10.1016/..

10

Avoidance of surface-related defects in MOVPE-grown InGaP l..:

Knauer, A. ; Krispin, P. ; Dadgar, A..
Journal of Crystal Growth. 287 (2006) 2 - p. 633-636 , 2006

Link: https://doi.org/10.1016/..

11

Interlayer formation due to group V-hydride stabilization d..:

Knauer, A ; Krispin, P ; Balakrishnan, V R..
Semiconductor Science and Technology. 19 (2004) 6 - p. 680-684 , 2004

Link: https://doi.org/10.1088/..

12

SixGe1−x films and heterojunctions produced by epitaxial cr..:

Dondeo, F. ; Santos, P.V. ; Kostial, H....
Journal of Non-Crystalline Solids. 338-340 (2004) - p. 197-200 , 2004

Link: https://doi.org/10.1016/..

13

Defect study of MOVPE-grown InGaP layers on GaAs:

Knauer, A. ; Krispin, P. ; Balakrishnan, V.R..
Journal of Crystal Growth. 272 (2004) 1-4 - p. 627-632 , 2004

Link: https://doi.org/10.1016/..

14

Nitrogen-related electron traps in Ga(As,N) layers (⩽3% N):

Krispin, P. ; Gambin, V. ; Harris, J. S..
Journal of Applied Physics. 93 (2003) 10 - p. 6095-6099 , 2003

Link: https://doi.org/10.1063/..

15

Properties of (In,Ga)(As,P)/GaAs interfaces grown under dif..:

Knauer, A. ; Krispin, P. ; Balakrishnan, V.R..
Journal of Crystal Growth. 248 (2003) - p. 364-368 , 2003

Link: https://doi.org/10.1016/..