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Kryśko, M.
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1

Influence of GaN substrate miscut on the XRD quantification..:

Moneta, J. ; Kryśko, M. ; Domagala, J.Z....
Acta Materialia.  276 (2024)  - p. 120082 , 2024
Link: https://doi.org/10.1016/..
 
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2

Growth and characterization of thin Al-rich AlGaN on bulk G..:

Prystawko, Pawel ; Giannazzo, F. ; Krysko, M....
Materials Science in Semiconductor Processing.  93 (2019)  - p. 153-157 , 2019
Link: https://doi.org/10.1016/..
 
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3

Luminescent N-polar (In,Ga)N/GaN quantum wells achieved by ..:

Chèze, C. ; Feix, F. ; Lähnemann, J....
Applied Physics Letters.  112 (2018)  2 - p. , 2018
Link: https://doi.org/10.1063/..
 
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4

Indium incorporation in semipolar (202̅1) and nonpolar (101..:

Sawicka, M. ; Feduniewicz-Żmuda, A. ; Kryśko, M....
Journal of Crystal Growth.  459 (2017)  - p. 129-134 , 2017
Link: https://doi.org/10.1016/..
 
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5

Comparative study of semipolar(202¯1), nonpolar(101¯0)and p..:

Sawicka, M. ; Wolny, P. ; Kryśko, M....
Journal of Crystal Growth.  465 (2017)  - p. 43-47 , 2017
Link: https://doi.org/10.1016/..
 
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6

Strain relaxation in semipolar (202¯1) InGaN grown by plasm..:

Sawicka, M. ; Kryśko, M. ; Muziol, G....
Journal of Applied Physics.  119 (2016)  18 - p. , 2016
Link: https://doi.org/10.1063/..
 
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7

Linear piezoelectricity material constants for ammonotherma..:

Witczak, P ; Witczak, Z ; Jemielniak, R...
Semiconductor Science and Technology.  30 (2015)  3 - p. 035008 , 2015
Link: https://doi.org/10.1088/..
 
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8

Influence of GaN substrate crystallographic quality on the ..:

Krysko, M. ; Grzanka, E. ; Domagala, J..
Crystal Research and Technology.  50 (2015)  9-10 - p. 759-763 , 2015
Link: https://doi.org/10.1002/..
 
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9

Corrigendum to "Growth mechanisms in semipolar (202¯1) and ..:

Sawicka, M. ; Chèze, C. ; Turski, H....
Journal of Crystal Growth.  415 (2015)  - p. 176 , 2015
Link: https://doi.org/10.1016/..
 
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10

Publisher's Note: "Ultraviolet light-emitting diodes grown ..:

Sawicka, M. ; Chèze, C. ; Turski, H....
Applied Physics Letters.  104 (2014)  20 - p. , 2014
Link: https://doi.org/10.1063/..
 
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11

AlGaN/GaN HEMT structures on ammono bulk GaN substrate:

Kruszewski, P ; Prystawko, P ; Kasalynas, I...
Semiconductor Science and Technology.  29 (2014)  7 - p. 075004 , 2014
Link: https://doi.org/10.1088/..
 
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12

Ultraviolet light-emitting diodes grown by plasma-assisted ..:

Sawicka, M. ; Chèze, C. ; Turski, H....
Applied Physics Letters.  102 (2013)  11 - p. , 2013
Link: https://doi.org/10.1063/..
 
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13

Triclinic deformation of InGaN layers grown on vicinal surf..:

Krysko, M. ; Domagala, J. Z. ; Czernecki, R..
Journal of Applied Physics.  114 (2013)  11 - p. 113512 , 2013
Link: https://doi.org/10.1063/..
 
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14

Growth mechanisms in semipolar (202¯1) and nonpolar m-plane..:

Sawicka, M. ; Chèze, C. ; Turski, H....
Journal of Crystal Growth.  377 (2013)  - p. 184-191 , 2013
Link: https://doi.org/10.1016/..
 
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15

Step-flow growth mode instability of N-polar GaN under N-ex..:

Chèze, C. ; Sawicka, M. ; Siekacz, M....
Applied Physics Letters.  103 (2013)  7 - p. , 2013
Link: https://doi.org/10.1063/..
 
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