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Kumagai, Yoshinao
214  results:
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1

Thermodynamic analysis of molecular beam epitaxy of group-I..:

Togashi, Rie ; Goto, Ken ; Higashiwaki, Masataka.
Japanese Journal of Applied Physics.  62 (2023)  5 - p. 055503 , 2023
Link: https://doi.org/10.35848..
 
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2

Temperature Dependence of the Anisotropic Dielectric Proper..:

, In: 2023 48th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz),
Liu, Shuang ; Agulto, Verdad C. ; Iwamoto, Toshiyuki... - p. 1-2 , 2023
Link: https://doi.org/10.1109/..
 
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3

Observation of nanopipes in edge-defined film-fed grown β-G..:

Nishikawa, Tomoka ; Goto, Ken ; Murakami, Hisashi...
Japanese Journal of Applied Physics.  62 (2023)  SF - p. SF1015 , 2023
Link: https://doi.org/10.35848..
 
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4

Mass spectrometric study of β-Ga2O3 growth process by metal..:

Ikenaga, Kazutada ; Okuyama, Takahito ; Tozato, Haruka...
Japanese Journal of Applied Physics.  62 (2023)  SF - p. SF1019 , 2023
Link: https://doi.org/10.35848..
 
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5

Ion Implantation Doping Technology for Ga2O3 and Its Applic..:

, In: 2023 21st International Workshop on Junction Technology (IWJT),
Higashiwaki, Masataka ; Goto, Ken ; Murakami, Hisashi. - p. 1-4 , 2023
Link: https://doi.org/10.23919..
 
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6

High-speed growth of thick high-purity β-Ga2O3 layers by lo..:

Yoshinaga, Junya ; Tozato, Haruka ; Okuyama, Takahito...
Applied Physics Express.  16 (2023)  9 - p. 095504 , 2023
Link: https://doi.org/10.35848..
 
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7

Characterization of electrical properties of β-Ga2O3 epilay..:

Iwamoto, Toshiyuki ; Agulto, Verdad Canila ; Liu, Shuang...
Japanese Journal of Applied Physics.  , 2023
Link: https://doi.org/10.35848..
 
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8

Growth of α-In2O3 films with different concentrations of In..:

Taguchi, Akito ; Yamamoto, Takumi ; Kaneko, Kentaro...
Japanese Journal of Applied Physics.  62 (2023)  SF - p. SF1023 , 2023
Link: https://doi.org/10.35848..
 
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9

Influence of growth rate on homoepitaxial growth of AlN at ..:

Kumagai, Yoshinao ; Goto, Ken ; Nagashima, Toru...
Applied Physics Express.  15 (2022)  11 - p. 115501 , 2022
Link: https://doi.org/10.35848..
 
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10

Thermodynamic analysis of β-Ga2O3 growth by molecular beam ..:

Togashi, Rie ; Ishida, Haruka ; Goto, Ken..
Japanese Journal of Applied Physics.  62 (2022)  1 - p. 015501 , 2022
Link: https://doi.org/10.35848..
 
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11

Vertical β-Ga2O3 Schottky barrier diodes with trench stairc..:

Kumar, Sandeep ; Murakami, Hisashi ; Kumagai, Yoshinao.
Applied Physics Express.  15 (2022)  5 - p. 054001 , 2022
Link: https://doi.org/10.35848..
 
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12

Effect of high temperature homoepitaxial growth of β-Ga2O3 ..:

Ikenaga, Kazutada ; Tanaka, Nami ; Nishimura, Taro...
Journal of Crystal Growth.  582 (2022)  - p. 126520 , 2022
Link: https://doi.org/10.1016/..
 
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13

Terahertz Time-Domain Ellipsometry of Heavily Doped β-Ga2 O:

, In: 2022 47th International Conference on Infrared, Millimeter and Terahertz Waves (IRMMW-THz),
Agulto, Verdad C. ; Iwamoto, Toshiyuki ; Wang, Youwei... - p. 1-2 , 2022
Link: https://doi.org/10.1109/..
 
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14

Effect of substrate orientation on homoepitaxial growth ofβ..:

Goto, Ken ; Murakami, Hisashi ; Kuramata, Akito...
Applied Physics Letters.  120 (2022)  10 - p. , 2022
Link: https://doi.org/10.1063/..
 
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15

Investigation of halide vapor phase epitaxy of In2O3 on sap..:

Nakahata, Hidetoshi ; Togashi, Rie ; Goto, Ken..
Journal of Crystal Growth.  563 (2021)  - p. 126111 , 2021
Link: https://doi.org/10.1016/..
 
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