E-LIB Suche - Ergebnisse für: Kundrotas, J

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Physica status solidi

Volume 134, Number 1: March 1 Physica status solidi ; Volume 134, Number 1, B

Abdeest, A. M ; Abdel-Gawad, M. M ; Aly, A. A... - Reprint 2021 . , [2022]

Link: https://doi.org/10.1515/..

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Light emission lifetimes in p-type δ-doped GaAs/AlAs multip..:

Kundrotas, J. ; Čerškus, A. ; Valušis, G....
Journal of Applied Physics. 112 (2012) 4 - p. , 2012

Link: https://doi.org/10.1063/..

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MBE growth and transport properties of silicon δ-doped GaAs..:

Lachab, M. ; Khanna, S.P. ; Harrison, P....
Journal of Crystal Growth. 312 (2010) 10 - p. 1761-1765 , 2010

Link: https://doi.org/10.1016/..

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Enhanced exciton photoluminescence in the selectively Si-do..:

Kundrotas, J. ; Čerškus, A. ; Nargelienė, V....
Journal of Applied Physics. 108 (2010) 6 - p. , 2010

Link: https://doi.org/10.1063/..

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Radiative recombination spectra of p-type δ-doped GaAs∕AlAs..:

Kundrotas, J. ; Čerškus, A. ; Valušis, G....
Journal of Applied Physics. 103 (2008) 12 - p. , 2008

Link: https://doi.org/10.1063/..

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Impurity-induced Huang–Rhys factor in beryllium δ-doped GaA..:

Kundrotas, J ; Čerškus, A ; Ašmontas, S...
Semiconductor Science and Technology. 22 (2007) 9 - p. 1070-1076 , 2007

Link: https://doi.org/10.1088/..

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Excitonic and impurity-related optical transitions in Beδ-d..:

Kundrotas, J. ; Čerškus, A. ; Ašmontas, S....
Physical Review B. 72 (2005) 23 - p. , 2005

Link: https://doi.org/10.1103/..

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Quantum well radiation detectors: assessment and perspectiv..:

Dargys, A ; Kundrotas, J ; Pospı́šil, S.
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 457 (2001) 3 - p. 564-570 , 2001

Link: https://doi.org/10.1016/..

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Influence of alpha particle bombardment and postannealing o..:

Kundrotas, J. ; Dargys, A. ; Valušis, G....
Journal of Applied Physics. 89 (2001) 11 - p. 6007-6012 , 2001

Link: https://doi.org/10.1063/..

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Changes of MQW photoluminescence under alpha particle irrad..:

Kundrotas, J. ; Dargys, A. ; Valušis, G....
Superlattices and Microstructures. 29 (2001) 4 - p. 281-285 , 2001

Link: https://doi.org/10.1006/..

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Impact ionization coefficient of excitons in n-GaAs:

Kundrotas, J
Semiconductor Science and Technology. 14 (1999) 5 - p. 461-464 , 1999

Link: https://doi.org/10.1088/..

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Electric-field-induced ionization of acceptors in p-GaAs:

Dargys, A ; Kundrotas, J ; Č≐sna, A.
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 434 (1999) 1 - p. 71-74 , 1999

Link: https://doi.org/10.1016/..

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Photoluminescence transients due to donor and exciton avala..:

Čésna, A ; Kundrotas, J. ; Dargys, A.
Journal of Luminescence. 78 (1998) 2 - p. 157-166 , 1998

Link: https://doi.org/10.1016/..

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Impact ionization of excitons by hot carriers in quantum we..:

Dargys, A ; Kundrotas, J
Semiconductor Science and Technology. 13 (1998) 11 - p. 1258-1261 , 1998

Link: https://doi.org/10.1088/..

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Piezoelectric-Interaction-Limited Capture Process in A3B5 C..:

Dargys, A. ; Kundrotas, J.
physica status solidi (b). 200 (1997) 2 - p. 509-518 , 1997

Link: https://doi.org/10.1002/..