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Kunert, B.
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1

Accelerated dark current degradation study of monolithicall..:

, In: 49th European Conference on Optical Communications (ECOC 2023),
Hsieh, P.-Y. ; Panda, D. P. ; Tsiara, A.... - p. None , 2023
Link: https://doi.org/10.1049/..
 
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2

III-V HBTs on 300 mm Si substrates using merged nano-ridges..:

, In: ESSDERC 2022 - IEEE 52nd European Solid-State Device Research Conference (ESSDERC),
Vais, A. ; Yadav, S. ; Mols, Y.... - p. 261-264 , 2022
Link: https://doi.org/10.1109/..
 
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3

III-V/III-N technologies for next generation high-capacity ..:

, In: 2022 International Electron Devices Meeting (IEDM),
Collaert, N. ; Alian, A. ; Banerjee, A.... - p. 11.5.1-11.5.4 , 2022
Link: https://doi.org/10.1109/..
 
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4

III-V on a Si platform for the next generations of communic..:

, In: 2022 6th IEEE Electron Devices Technology & Manufacturing Conference (EDTM),
Parvais, B. ; Vais, A. ; Yadav, S.... - p. 250-252 , 2022
Link: https://doi.org/10.1109/..
 
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5

From 5G to 6G: will compound semiconductors make the differ..:

, In: 2020 IEEE 15th International Conference on Solid-State & Integrated Circuit Technology (ICSICT),
Collaert, N. ; Alian, A. ; Banerjee, A.... - p. 1-4 , 2020
Link: https://doi.org/10.1109/..
 
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6

Deep-Level Transient Spectroscopy of GaAs Nanoridge Diodes ..:

Syshchyk, O. ; Hsu, B. ; Yu, H....
Physical Review Applied.  14 (2020)  2 - p. , 2020
Link: https://doi.org/10.1103/..
 
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7

Very Low Temperature Epitaxy of Group-IV Semiconductors for..:

Porret, C. ; Hikavyy, A. ; Granados, J. F. Gomez...
ECS Journal of Solid State Science and Technology.  8 (2019)  8 - p. P392-P399 , 2019
Link: https://doi.org/10.1149/..
 
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8

Structural analysis and resistivity measurements of InAs an..:

Mols, Y. ; Bogdanowicz, J. ; Favia, P....
Journal of Applied Physics.  125 (2019)  24 - p. , 2019
Link: https://doi.org/10.1063/..
 
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9

Self-diffusion and ionic exchange in mechanosynthesized, na..:

Lunghammer, S. ; Düvel, A. ; Posch, P....
Solid State Ionics.  343 (2019)  - p. 115067 , 2019
Link: https://doi.org/10.1016/..
 
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10

First demonstration of III-V HBTs on 300 mm Si substrates u..:

, In: 2019 IEEE International Electron Devices Meeting (IEDM),
Vais, A. ; Alcotte, R. ; Ingels, M.... - p. 9.1.1-9.1.4 , 2019
Link: https://doi.org/10.1109/..
 
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11

Anisotropic relaxation behavior of InGaAs/GaAs selectively ..:

Guo, W. ; Mols, Y. ; Belz, J....
Journal of Applied Physics.  122 (2017)  2 - p. , 2017
Link: https://doi.org/10.1063/..
 
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12

III-V on silicon DFB laser arrays:

, In: 2016 IEEE 13th International Conference on Group IV Photonics (GFP),
Van Thourhout, D. ; Shi, Y. ; Tian, B.... - p. 155-155 , 2016
Link: https://doi.org/10.1109/..
 
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13

Study towards integration of In0.53Ga0.47As on 300 mm Si fo..:

Mols, Y. ; Kunert, B. ; Gaudin, G...
Journal of Crystal Growth.  452 (2016)  - p. 244-247 , 2016
Link: https://doi.org/10.1016/..
 
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14

III-Y on silicon DFB laser arrays:

, In: 2016 IEEE Photonics Society Summer Topical Meeting Series (SUM),
Thourhout, D. Yan ; Shi, Y. ; Tian, B.... - p. 57-57 , 2016
Link: https://doi.org/10.1109/..
 
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15

III/V nano ridge structures for optical applications on pat..:

Kunert, B. ; Guo, W. ; Mols, Y....
Applied Physics Letters.  109 (2016)  9 - p. , 2016
Link: https://doi.org/10.1063/..
 
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