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Kurps, R.
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1

Publisher's Note: "Atomically smooth and single crystalline..:

Giussani, A. ; Rodenbach, P. ; Zaumseil, P....
Journal of Applied Physics.  105 (2009)  12 - p. 129905 , 2009
Link: https://doi.org/10.1063/..
 
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2

Atomically smooth and single crystalline Ge(111)/cubic-Pr2O..:

Giussani, A. ; Rodenbach, P. ; Zaumseil, P....
Journal of Applied Physics.  105 (2009)  3 - p. , 2009
Link: https://doi.org/10.1063/..
 
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3

Circuit applications of high-performance SiGe:C HBTs integr..:

Winkler, W ; Borngräber, J ; Heinemann, B...
Applied Surface Science.  224 (2004)  1-4 - p. 297-305 , 2004
Link: https://doi.org/10.1016/..
 
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4

Transient processes and structural transformations in SixGe..:

Krüger, D ; Efremov, A.A ; Murota, J...
Applied Surface Science.  203-204 (2003)  - p. 285-289 , 2003
Link: https://doi.org/10.1016/..
 
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5

Formation of shallow source/drain extensions for metal–oxid..:

Rücker, H. ; Heinemann, B. ; Barth, R....
Applied Physics Letters.  82 (2003)  5 - p. 826-828 , 2003
Link: https://doi.org/10.1063/..
 
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6

Oxygen beam SIMS depth profiling of Si1−xGex layers: transi..:

Krüger, D. ; Efremov, A. A. ; Murota, J....
Surface and Interface Analysis.  33 (2002)  8 - p. 663-671 , 2002
Link: https://doi.org/10.1002/..
 
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7

Fluorine incorporation into gate stacks of advanced silicon..:

Krüger, D. ; Dabrowski, J. ; Gaworzewski, P...
Journal of Applied Physics.  90 (2001)  7 - p. 3578-3584 , 2001
Link: https://doi.org/10.1063/..
 
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8

Cost-effective high-performance high-voltage SiGe:C HBTs wi..:

, In: International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224),
Heinemann, B. ; Kruger, D. ; Kurps, R.... - p. 15.6.1-15.6.4 , 2001
Link: https://doi.org/10.1109/..
 
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9

Effect of sodium and oxygen doping on the conductivity of C..:

Scheer, R ; Luck, I ; Kanis, M..
Thin Solid Films.  361-362 (2000)  - p. 468-472 , 2000
Link: https://doi.org/10.1016/..
 
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10

Influence of fluorine contamination on reliability of thin ..:

Krüger, D. ; Gaworzewski, P. ; Kurps, R..
Microelectronics Reliability.  40 (2000)  8-10 - p. 1335-1340 , 2000
Link: https://doi.org/10.1016/..
 
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11

The impact of supersaturated carbon on transient enhanced d..:

Rücker, H. ; Heinemann, B. ; Bolze, D....
Applied Physics Letters.  74 (1999)  22 - p. 3377-3379 , 1999
Link: https://doi.org/10.1063/..
 
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12

Erratum: "Suppressed diffusion of boron and carbon in carbo..:

Rücker, H. ; Heinemann, B. ; Röpke, W....
Applied Physics Letters.  75 (1999)  1 - p. 147-147 , 1999
Link: https://doi.org/10.1063/..
 
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13

Suppressed diffusion of boron and carbon in carbon-rich sil..:

Rücker, H. ; Heinemann, B. ; Röpke, W....
Applied Physics Letters.  73 (1998)  12 - p. 1682-1684 , 1998
Link: https://doi.org/10.1063/..
 
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14

Influence of interdiffusion and surfactants on Si/SiGe hete..:

Zeindl, H.P. ; Nilsson, S. ; Jagdhold, U....
Applied Surface Science.  102 (1996)  - p. 107-111 , 1996
Link: https://doi.org/10.1016/..
 
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15

Influence of surfactants on molecular beam epitaxial grown ..:

Zeindl, H.P. ; Nilsson, S. ; Klatt, J...
Journal of Crystal Growth.  157 (1995)  1-4 - p. 31-35 , 1995
Link: https://doi.org/10.1016/..
 
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