I agree that this site is using cookies. You can find further informations here.
X
Kuzmík, Ján
35  results:
Search for persons X
?
1

Extensive targeting of chemical space at the prime side of ..:

Bach, Kathrin ; Dohnálek, Jan ; Škerlová, Jana...
European Journal of Medicinal Chemistry.  275 (2024)  - p. 116606 , 2024
Link: https://doi.org/10.1016/..
 
?
2

Vertical GaN Transistor with Semi‐Insulating Channel:

Šichman, Peter ; Stoklas, Roman ; Hasenöhrl, Stanislav...
physica status solidi (a).  , 2023
Link: https://doi.org/10.1002/..
 
?
3

Mg Doping of N-Polar, In-Rich InAlN:

Kuzmík, Ján ; Pohorelec, Ondrej ; Hasenöhrl, Stanislav...
Materials.  16 (2023)  6 - p. 2250 , 2023
Link: https://doi.org/10.3390/..
 
?
4

Growth of N-polar In-rich InAlN by metal organic chemical v..:

Hasenöhrl, Stanislav ; Blaho, Michal ; Dobročka, Edmund...
Materials Science in Semiconductor Processing.  156 (2023)  - p. 107290 , 2023
Link: https://doi.org/10.1016/..
 
?
5

In(Ga)N 3D Growth on GaN-Buffered On-Axis and Off-Axis (000..:

Rosová, Alica ; Dobročka, Edmund ; Eliáš, Peter...
Nanomaterials.  12 (2022)  19 - p. 3496 , 2022
Link: https://doi.org/10.3390/..
 
?
6

InN crystal habit, structural, electrical, and optical prop..:

Gucmann, Filip ; Kučera, Michal ; Hasenöhrl, Stanislav...
Semiconductor Science and Technology.  36 (2021)  7 - p. 075025 , 2021
Link: https://doi.org/10.1088/..
 
?
7

Growth and Properties of N‐Polar InN/InAlN Heterostructures:

Hasenöhrl, Stanislav ; Dobročka, Edmund ; Stoklas, Roman...
physica status solidi (a).  217 (2020)  19 - p. , 2020
Link: https://doi.org/10.1002/..
 
?
8

Structural, electrical, and optical properties of annealed ..:

Kučera, Michal ; Adikimenakis, Adam ; Dobročka, Edmund...
Thin Solid Films.  672 (2019)  - p. 114-119 , 2019
Link: https://doi.org/10.1016/..
 
?
9

InGaN/(GaN)/AlGaN/GaN normally-off metal-oxide-semiconducto..:

Gregušová, Dagmar ; Tóth, Lajos ; Pohorelec, Ondrej...
Japanese Journal of Applied Physics.  58 (2019)  SC - p. SCCD21 , 2019
Link: https://doi.org/10.7567/..
 
?
10

Effect of temperature and carrier gas on the properties of ..:

Chauhan, Prerna ; Hasenöhrl, Stanislav ; Dobročka, Edmund...
Applied Surface Science.  470 (2019)  - p. 1-7 , 2019
Link: https://doi.org/10.1016/..
 
?
11

State of the art on gate insulation and surface passivation..:

Hashizume, Tamotsu ; Nishiguchi, Kenya ; Kaneki, Shota..
Materials Science in Semiconductor Processing.  78 (2018)  - p. 85-95 , 2018
Link: https://doi.org/10.1016/..
 
?
12

Creation of Two‐Dimensional Electron Gas and Role of Surfac..:

Gucmann, Filip ; Ťapajna, Milan ; Pohorelec, Ondrej...
physica status solidi (a).  215 (2018)  24 - p. , 2018
Link: https://doi.org/10.1002/..
 
?
13

Generation of hole gas in non-inverted InAl(Ga)N/GaN hetero..:

Hasenöhrl, Stanislav ; Chauhan, Prerna ; Dobročka, Edmund...
Applied Physics Express.  12 (2018)  1 - p. 014001 , 2018
Link: https://doi.org/10.7567/..
 
?
14

Polarization‐Engineered n+GaN/InGaN/AlGaN/GaN Normally‐Off ..:

Gregušová, Dagmar ; Blaho, Michal ; Haščík, Štefan...
physica status solidi (a).  214 (2017)  11 - p. , 2017
Link: https://doi.org/10.1002/..
 
?
15

Proposal of normally-off InN-channel high-electron mobility..:

Kuzmík, Ján
Semiconductor Science and Technology.  29 (2014)  3 - p. 035015 , 2014
Link: https://doi.org/10.1088/..
 
1-15