E-LIB Suche - Ergebnisse für: Kuzuhara, Masaaki

1

Effect of Ultra‐Thin AlGaN Regrown Layer on the Electrical ..:

Nezu, Toi ; Maeda, Shogo ; Baratov, Ali...
physica status solidi (a). , 2024

Link: https://doi.org/10.1002/..

2

Low thermal budget V/Al/Mo/Au ohmic contacts for improved p..:

Baratov, Ali ; Igarashi, Takahiro ; Ishiguro, Masaki...
Japanese Journal of Applied Physics. , 2023

Link: https://doi.org/10.35848..

3

MOVPE growth of AlGaN on RIE-treated GaN surfaces and its a..:

, In: 2023 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK),

Yamamoto, Akio ; Baratov, Ali ; Asubar, Joel T.. - p. 1-5 , 2023

Link: https://doi.org/10.1109/..

4

Evidence of reduced interface states in Al2O3/AlGaN MIS str..:

Baratov, Ali ; Kawabata, Shinsaku ; Urano, Shun...
Applied Physics Express. 15 (2022) 10 - p. 104002 , 2022

Link: https://doi.org/10.35848..

5

An Accurate Approach to Develop Small Signal Circuit Models..:

Jadhav, Aakash ; Ozawa, Takashi ; Baratov, Ali...
IEEE Journal of the Electron Devices Society. 10 (2022) - p. 797-807 , 2022

Link: https://doi.org/10.1109/..

6

Generalized Frequency Dependent Small Signal Model for High..:

Jadhav, Aakash ; Ozawa, Takashi ; Baratov, Ali...
IEEE Journal of the Electron Devices Society. 9 (2021) - p. 570-581 , 2021

Link: https://doi.org/10.1109/..

7

GaN-based MIS-HEMTs with Al2O3 dielectric deposited by low-..:

Low, Rui Shan ; Asubar, Joel T. ; Baratov, Ali...
Applied Physics Express. 14 (2021) 3 - p. 031004 , 2021

Link: https://doi.org/10.35848..

8

Stoichiometric imbalances in Mg-implanted GaN:

Herbert, Kai C. ; Shibata, Kazuki ; Asubar, Joel T..
Japanese Journal of Applied Physics. 60 (2021) 6 - p. 066504 , 2021

Link: https://doi.org/10.35848..

9

Deep-Donor-Induced Suppression of Current Collapse in an Al..:

TANAKA, Taketoshi ; ITO, Norikazu ; TAKADO, Shinya..
IEICE Transactions on Electronics. E103.C (2020) 4 - p. 186-190 , 2020

Link: https://doi.org/10.1587/..

10

Design considerations for normally-off operation in Schottk..:

Tokuda, Hirokuni ; Asubar, Joel T. ; Kuzuhara, Masaaki
Japanese Journal of Applied Physics. 59 (2020) 8 - p. 084002 , 2020

Link: https://doi.org/10.35848..

11

Optical Discrimination of TSDs and TEDs in 4H-SiC Substrate..:

Hattori, Ryo ; Oku, Osamu ; Sugie, Ryuichi..
Materials Science Forum. 963 (2019) - p. 259-262 , 2019

Link: https://doi.org/10.4028/..

12

Influence of reactive-ion-etching depth on interface proper..:

Tokuda, Hirokuni ; Harada, Sayaka ; Asubar, Joel T..
Japanese Journal of Applied Physics. 58 (2019) 10 - p. 106503 , 2019

Link: https://doi.org/10.7567/..

13

Enhancement‐Mode AlGaN/GaN Vertical Trench Metal–Insulator–..:

Yamamoto, Akio ; Kanatani, Keito ; Yoneda, Norifumi...
physica status solidi (a). 217 (2019) 7 - p. , 2019

Link: https://doi.org/10.1002/..

14

On the presence of Ga2O sub-oxide in high-pressure water va..:

Escaño, Mary Clare S. ; Asubar, Joel T. ; Yatabe, Zenji...
Applied Surface Science. 481 (2019) - p. 1120-1126 , 2019

Link: https://doi.org/10.1016/..

15

Improved insulator/semiconductor interfaces in Al2O3/AlGaN/..:

, In: 2019 Compound Semiconductor Week (CSW),

Kawabata, Shinsaku ; Asubar, Joel Tacla ; Tokuda, Hirokuni.. - p. 1-1 , 2019

Link: https://doi.org/10.1109/..