E-LIB Suche - Ergebnisse für: Lähnemann, J.

1

Composition and optical properties of (In, Ga)As nanowires ..:

Ruiz, M Gómez ; Castro, A ; Herranz, J...
Nanotechnology. 35 (2024) 26 - p. 265702 , 2024

Link: https://doi.org/10.1088/..

2

Comparative study of electrical properties of chalcogenide ..:

Takagaki, Y. ; Hanke, M. ; Ramsteiner, M..
Journal of Alloys and Compounds. 931 (2023) - p. 167565 , 2023

Link: https://doi.org/10.1016/..

3

Interface Recombination in Ga- and N-Polar GaN/(Al,Ga)N Qua..:

Auzelle, T. ; Sinito, C. ; Lähnemann, J....
Physical Review Applied. 17 (2022) 4 - p. , 2022

Link: https://doi.org/10.1103/..

4

Luminescence properties of GaP1−xNx alloys grown on nominal..:

, In: 2022 Compound Semiconductor Week (CSW),

Ben Saddik, K. ; Alamo, P. ; Lahnemann, J.... - p. 1-2 , 2022

Link: https://doi.org/10.1109/..

5

Toward controllable Si-doping in oxide molecular beam epita..:

Ardenghi, A. ; Bierwagen, O. ; Falkenstein, A....
Applied Physics Letters. 121 (2022) 4 - p. , 2022

Link: https://doi.org/10.1063/..

6

Correction to Absence of Quantum-Confined Stark Effect in G..:

Sinito, C. ; Corfdir, P. ; Pfüller, C....
Nano Letters. 20 (2020) 9 - p. 6930-6930 , 2020

Link: https://doi.org/10.1021/..

7

Absence of Quantum-Confined Stark Effect in GaN Quantum Dis..:

Sinito, C. ; Corfdir, P. ; Pfüller, C....
Nano Letters. 19 (2019) 9 - p. 5938-5948 , 2019

Link: https://doi.org/10.1021/..

8

Luminescent Defects in a Few-Layer h-BN Film Grown by Molec..:

Hernández-Mínguez, A. ; Lähnemann, J. ; Nakhaie, S...
Physical Review Applied. 10 (2018) 4 - p. , 2018

Link: https://doi.org/10.1103/..

9

Luminescent N-polar (In,Ga)N/GaN quantum wells achieved by ..:

Chèze, C. ; Feix, F. ; Lähnemann, J....
Applied Physics Letters. 112 (2018) 2 - p. , 2018

Link: https://doi.org/10.1063/..

10

Crystal Phase Quantum Well Emission with Digital Control:

Assali, S. ; Lähnemann, J. ; Vu, T. T. T....
Nano Letters. 17 (2017) 10 - p. 6062-6068 , 2017

Link: https://doi.org/10.1021/..

11

The hydride vapor phase epitaxy of GaN on silicon covered b..:

Jahn, U ; Musolino, M ; Lähnemann, J...
Semiconductor Science and Technology. 31 (2016) 6 - p. 065018 , 2016

Link: https://doi.org/10.1088/..

12

Intersubband transitions in nonpolar GaN/Al(Ga)N heterostru..:

Lim, C. B. ; Beeler, M. ; Ajay, A....
Journal of Applied Physics. 118 (2015) 1 - p. 014309 , 2015

Link: https://doi.org/10.1063/..

13

Stacking faults as quantum wells in nanowires: Density of s..:

Corfdir, P. ; Hauswald, C. ; Zettler, J. K....
Physical Review B. 90 (2014) 19 - p. , 2014

Link: https://doi.org/10.1103/..

14

Understanding peculiarities in the optoelectronic character..:

Musolino, M. ; Tahraoui, A. ; Limbach, F....
Applied Physics Letters. 105 (2014) 8 - p. , 2014

Link: https://doi.org/10.1063/..

15

Luminescence of GaAs nanowires consisting of wurtzite and z..:

Jahn, U. ; Lähnemann, J. ; Pfüller, C....
Physical Review B. 85 (2012) 4 - p. , 2012

Link: https://doi.org/10.1103/..