E-LIB Suche - Ergebnisse für: La Via, F.

1

Advanced approach of bulk (111) 3C-SiC epitaxial growth:

Calabretta, C. ; Scuderi, V. ; Bongiorno, C....
Microelectronic Engineering. 283 (2024) - p. 112116 , 2024

2

Partially depleted operation of 250 μm-thick silicon carbid..:

Kushoro, M.H. ; Angelone, M. ; Bozzi, D....
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 1058 (2024) - p. 168918 , 2024

Link: https://doi.org/10.1016/..

3

Advanced strategies for high activation in ion implanted 4H..:

, In: 2024 25th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE),

Calabretta, C. ; Pecora, A. ; Agati, M.... - p. 1-5 , 2024

Link: https://doi.org/10.1109/..

4

Assessing innovative bulk (111) 3C-SiC epitaxial growth:

, In: 2024 25th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE),

Calabretta, C. ; Scuderi, V. ; Bongiorno, C.... - p. 1-5 , 2024

Link: https://doi.org/10.1109/..

5

Exploring crystal recovery and dopant activation in coated ..:

Calabretta, C. ; Pecora, A. ; Agati, M....
Materials Science in Semiconductor Processing. 174 (2024) - p. 108175 , 2024

Link: https://doi.org/10.1016/..

6

Space charge limited current in 4H-SiC Schottky diodes in t..:

Vivona, M. ; Fiorenza, P. ; Scuderi, V....
Applied Physics Letters. 123 (2023) 7 - p. , 2023

Link: https://doi.org/10.1063/..

7

Performance of a thick 250 μm silicon carbide detector: sta..:

Kushoro, M.H. ; Rebai, M. ; La Via, F....
Journal of Instrumentation. 18 (2023) 3 - p. C03007 , 2023

Link: https://doi.org/10.1088/..

8

Ion implantation and activation of aluminum in bulk 3C-SiC ..:

Torregrosa, F. ; Canino, M. ; Li, F....
MRS Advances. 7 (2022) 36 - p. 1347-1352 , 2022

Link: https://doi.org/10.1557/..

9

Electrical passivation of stacking-fault crystalline defect..:

Fiorenza, P. ; Maiolo, L. ; Fortunato, G....
Journal of Applied Physics. 132 (2022) 24 - p. , 2022

Link: https://doi.org/10.1063/..

10

Nanostructured 3C-SiC on Si by a network of (111) platelets..:

Vanacore, G. M. ; Chrastina, D. ; Scalise, E....
Physical Chemistry Chemical Physics. 24 (2022) 39 - p. 24487-24494 , 2022

Link: https://doi.org/10.1039/..

11

Towards vertical Schottky diodes on bulk cubic silicon carb..:

Roccaforte, F. ; Greco, G. ; Fiorenza, P....
Applied Surface Science. 606 (2022) - p. 154896 , 2022

Link: https://doi.org/10.1016/..

12

Initial investigations into the MOS interface of freestandi..:

Renz, A B ; Li, F ; Vavasour, O J...
Semiconductor Science and Technology. 36 (2021) 5 - p. 055006 , 2021

Link: https://doi.org/10.1088/..

13

Growth of thick [1 1 1]-oriented 3C-SiC films on T-shaped S..:

Agati, M. ; Boninelli, S. ; Calabretta, C....
Materials & Design. 208 (2021) - p. 109833 , 2021

Link: https://doi.org/10.1016/..

14

Silicon Carbide characterization at the n_TOF spallation so..:

Kushoro, M.H. ; Rebai, M. ; Dicorato, M....
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 983 (2020) - p. 164578 , 2020

Link: https://doi.org/10.1016/..

15

On the origin of the premature breakdown of thermal oxide o..:

Fiorenza, P. ; Schilirò, E. ; Giannazzo, F....
Applied Surface Science. 526 (2020) - p. 146656 , 2020

Link: https://doi.org/10.1016/..