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Labed, Madani
42
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Online (42)
Mediatypes
Articles (Online) (29)
OpenAccess-fulltext (13)
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1
Improvement of β-Ga2O3-based Schottky barrier UV photodetec..:
Cherroun, Rima
;
Meftah, Afak
;
Sengouga, Nouredine
...
Journal of Materials Science: Materials in Electronics. 35 (2024) 16 - p. , 2024
Link:
https://doi.org/10.1007/..
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2
Bioresorbable Resistive Switching Device Based on Organic/I..:
Nguyen, Tan Hoang Vu
;
Shaikh, Mohammad Tauquir Alam Shamim
;
Jeon, Ho Jung
...
Advanced Electronic Materials. 10 (2024) 5 - p. , 2024
Link:
https://doi.org/10.1002/..
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3
Ultrahigh Photoresponsivity of W/Graphene/β-Ga2O3 Schottky ..:
Labed, Madani
;
Park, Bo-In
;
Kim, Jekyung
...
ACS Nano. , 2024
Link:
https://doi.org/10.1021/..
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4
Non-damaging growth and band alignment of p-type NiO/β-Ga2O..:
Min, Ji Young
;
Labed, Madani
;
Prasad, Chowdam Venkata
...
Journal of Materials Chemistry C. , 2024
Link:
https://doi.org/10.1039/..
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5
Charge-carrier engineering of staggered-gap p-CuAlO2/β-Ga2O..:
Prasad, Chowdam Venkata
;
Labed, Madani
;
Park, Jang Hyeok
..
Materials Today Physics. 40 (2024) - p. 101327 , 2024
Link:
https://doi.org/10.1016/..
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6
Modeling temperature dependent Ni/β-Ga2O3 Schottky barrier ..:
Labed, Madani
;
Meftah, Afak
;
Sengouga, Nouredine
...
Materials Science and Engineering: B. 306 (2024) - p. 117485 , 2024
Link:
https://doi.org/10.1016/..
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7
Trap-assisted tunneling in type II Ag2O/β-Ga2O3 self-powere..:
Labed, Madani
;
Kim, Kihwan
;
Kim, Kyung Hwan
..
Sensors and Actuators A: Physical. 372 (2024) - p. 115368 , 2024
Link:
https://doi.org/10.1016/..
?
8
Device engineering of p-CuAlO2/β-Ga2O3 interface: A stagger..:
Prasad, Chowdam Venkata
;
Labed, Madani
;
Alam Shamim Shaikh, Mohammad Tauquir
...
Materials Today Advances. 19 (2023) - p. 100402 , 2023
Link:
https://doi.org/10.1016/..
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9
Interface engineering of p-type quaternary metal oxide semi..:
Prasad, Chowdam Venkata
;
Park, Joon Hui
;
Min, Ji Young
...
Materials Today Physics. 30 (2023) - p. 100932 , 2023
Link:
https://doi.org/10.1016/..
?
10
Tunneling via surface dislocation in W/β-Ga2O3 Schottky bar..:
Labed, Madani
;
Min, Ji Young
;
Slim, Amina Ben
...
Journal of Semiconductors. 44 (2023) 7 - p. 072801 , 2023
Link:
https://doi.org/10.1088/..
?
11
Gallium oxide as an electron transport, a window, an UV and..:
Barkat, Sarra
;
Meftah, Afak
;
Labed, Madani
...
Optical and Quantum Electronics. 56 (2023) 2 - p. , 2023
Link:
https://doi.org/10.1007/..
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12
On the nature of majority and minority traps in β-Ga2O3: A ..:
Labed, Madani
;
Sengouga, Nouredine
;
Venkata Prasad, Chowdam
..
Materials Today Physics. 36 (2023) - p. 101155 , 2023
Link:
https://doi.org/10.1016/..
?
13
Ga2O3-based X-ray detector and scintillators: A review:
Venkata Prasad, Chowdam
;
Labed, Madani
;
Alam Shamim Shaikh, Mohammad Tauquir
...
Materials Today Physics. 35 (2023) - p. 101095 , 2023
Link:
https://doi.org/10.1016/..
?
14
Reduction of Fermi-Level Pinning and Controlling of Ni/β-Ga..:
Labed, Madani
;
Min, Ji Young
;
Jo, Eun Seo
...
ACS Applied Electronic Materials. 5 (2023) 6 - p. 3198-3205 , 2023
Link:
https://doi.org/10.1021/..
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15
Physical Operations of a Self-Powered IZTO/β-Ga2O3 Schottky..:
Labed, Madani
;
Kim, Hojoong
;
Park, Joon Hui
...
Nanomaterials. 12 (2022) 7 - p. 1061 , 2022
Link:
https://doi.org/10.3390/..
1-15