Lane, Dominic
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3

Demonstration of a Fast, Low-Voltage, III-V Semiconductor, ..:

, In: 2021 5th IEEE Electron Devices Technology & Manufacturing Conference (EDTM),
 
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4

Simulations of resonant tunnelling through InAs/AlSb hetero..:

Lane, Dominic ; Hayne, Manus
Journal of Physics D: Applied Physics.  54 (2021)  35 - p. 355104 , 2021
 
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Simulations of Ultralow-Power Nonvolatile Cells for Random-..:

Lane, Dominic ; Hayne, Manus
IEEE Transactions on Electron Devices.  67 (2020)  2 - p. 474-480 , 2020
 
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Defect formation in InGaAs/AlSb/InAs memory devices:

Trevisan, Aurelia ; Hodgson, Peter ; Lane, Dominic..
https://eprints.lancs.ac.uk/id/eprint/194488/1/JVB23_AR_PCSI2023_00096.pdf.  , 2023
 
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ULTRARAM : A Low-Energy, High-Endurance, Compound-Semicondu..:

Hodgson, Peter ; Lane, Dominic ; Carrington, Peter...
https://eprints.lancs.ac.uk/id/eprint/164465/1/Hodgson_Adv_Elect_Materials_2101103_2022_.pdf.  , 2022
 
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ULTRARAM™ : Design, Modelling, Fabrication and Testing of U..:

Lane, Dominic ; Hayne, Manus ; Marshall, Andrew
https://eprints.lancs.ac.uk/id/eprint/161780/1/2021LanePhD.pdf.  , 2021
 
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ULTRARAM : toward the development of a III-V semiconductor,..:

Lane, Dominic ; Hodgson, Peter ; Potter, Richard..
https://eprints.lancs.ac.uk/id/eprint/152423/1/ULTRARAM_TED_v4.2.pdf.  , 2021
 
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Simulations of ultra-low power non-volatile cells for rando..:

Lane, Dominic ; Hayne, Manus
https://eprints.lancs.ac.uk/id/eprint/139267/1/LaneandHayne.pdf.  , 2020
 
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