E-LIB Suche - Ergebnisse für: Lanke, U.D.

1

The effects of aging treatment and strain rates on damage e..:

Adesola, A.O. ; Odeshi, A.G. ; Lanke, U.D.
Materials & Design. 45 (2013) - p. 212-221 , 2013

Link: https://doi.org/10.1016/..

2

X-ray photoemission electron microscopic study of transform..:

Mostaghimi Ghomi, H ; Lanke, U D ; Odeshi, A G
Canadian Metallurgical Quarterly. 51 (2012) 2 - p. 202-209 , 2012

Link: https://doi.org/10.1179/..

3

Coexistence of antiferromagnetic and ferromagnetic orders a..:

Nechache, R ; Nauenheim, C ; Lanke, U...
Journal of Physics: Condensed Matter. 24 (2012) 14 - p. 142202 , 2012

Link: https://doi.org/10.1088/..

4

Shape transition in very large germanium islands on Si(111):

MacLeod, J. M. ; Lipton-Duffin, J. A. ; Lanke, U...
Applied Physics Letters. 94 (2009) 10 - p. , 2009

Link: https://doi.org/10.1063/..

5

Soft X-ray spectromicroscopy beamline at the CLS: Commissio..:

Kaznatcheev, K.V. ; Karunakaran, Ch. ; Lanke, U.D....
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 582 (2007) 1 - p. 96-99 , 2007

Link: https://doi.org/10.1016/..

6

Toward the Ultimate Tribological Interface: Surface Chemist..:

Sumant, A. V. ; Grierson, D. S. ; Gerbi, J. E....
Advanced Materials. 17 (2005) 8 - p. 1039-1045 , 2005

Link: https://doi.org/10.1002/..

7

Filled and empty states of disordered GaN studied by x-ray ..:

Ruck, B. J. ; Koo, A. ; Lanke, U. D....
Journal of Applied Physics. 96 (2004) 6 - p. 3571-3573 , 2004

Link: https://doi.org/10.1063/..

8

Field emission from a-GaN films deposited on Si (100):

Joag, D.S. ; Late, D.J. ; Lanke, U.D.
Solid State Communications. 130 (2004) 5 - p. 305-308 , 2004

Link: https://doi.org/10.1016/..

9

Quantitative study of molecularN2trapped in disordered GaN:..:

Ruck, B. J. ; Koo, A. ; Lanke, U. D....
Physical Review B. 70 (2004) 23 - p. , 2004

Link: https://doi.org/10.1103/..

10

X‐ray absorption spectroscopy in the analysis of GaN thin f..:

Metson, J. B. ; Trodahl, H. J. ; Ruck, B. J...
Surface and Interface Analysis. 35 (2003) 9 - p. 719-722 , 2003

Link: https://doi.org/10.1002/..

11

Ion beam analysis of ion-assisted deposited amorphous GaN:

Kennedy, V.J. ; Markwitz, A. ; Lanke, U.D....
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 190 (2002) 1-4 - p. 620-624 , 2002

Link: https://doi.org/10.1016/..

12

Effect of 80 keV Ar+ implantation on the properties of puls..:

Lanke, U. D.
Bulletin of Materials Science. 24 (2001) 1 - p. 35-38 , 2001

Link: https://doi.org/10.1007/..

13

57Fe-ion implantation in pulse laser deposited La0.75Ca0.25..:

Lanke, U. D. ; Pal, J. Prabhjyot
Bulletin of Materials Science. 23 (2000) 1 - p. 55-59 , 2000

Link: https://doi.org/10.1007/..

14

Ion beam processing of oriented CuO films deposited on (100..:

Lanke, U.D. ; Vedawyas, M.
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 155 (1999) 1-2 - p. 97-101 , 1999

Link: https://doi.org/10.1016/..

15

Low dose Ar+ ion implantation effects on the properties of ..:

Patil, S.I. ; Shreekala, R. ; Lanke, U...
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 114 (1996) 1-2 - p. 42-45 , 1996

Link: https://doi.org/10.1016/..