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2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits) ,
8
Simple Binary In-Te OTS with Sub-nm HfOₓ Buffer Layer for 3..:
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2023 International Electron Devices Meeting (IEDM) ,
9
Superior retention (>1 year, 85 °C) and memory window (~1.8..:
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2023 International Electron Devices Meeting (IEDM) ,
11
Enhancing Se-based Selector-only Memory with Ultra-fast Wri..:
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2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits) ,
15