Lee, Ya-Huan
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2

Analysis of Abnormal C–V Hump on Si3N4 MIS-HEMT With Mesa I..:

Lee, Ya-Huan ; Chang, Kai-Chun ; Lin, Hsin-Ni...
IEEE Transactions on Electron Devices.  71 (2024)  4 - p. 2349-2354 , 2024
 
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3

The Transition of Threshold Voltage Shift of Al2O3/Si3N4 Al..:

Lee, Ya-Huan ; Chang, Kai-Chun ; Tai, Mao-Chou...
IEEE Transactions on Electron Devices.  71 (2024)  3 - p. 1792-1797 , 2024
 
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5

Investigation of Threshold Voltage and Drain Current Degrad..:

Kuo, Hung-Ming ; Chang, Ting-Chang ; Chang, Kai-Chun...
IEEE Transactions on Electron Devices.  70 (2023)  5 - p. 2216-2221 , 2023
 
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6

Degradation mechanism differences between TiN- and TaN-elec..:

Yeh, Yu-Hsuan ; Chen, Wen-Chung ; Chang, Ting-Chang...
Semiconductor Science and Technology.  38 (2023)  8 - p. 085004 , 2023
 
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9

Analysis of Hump Effect Induced by Positive Bias Temperatur..:

Hung, Wei-Chieh ; Jin, Fu-Yuan ; Chang, Ting-Chang...
IEEE Transactions on Device and Materials Reliability.  23 (2023)  2 - p. 263-268 , 2023
 
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10

Impact of Variant Gate Insulator Fabrication Process on Rel..:

Chien, Ya-Ting ; Zhou, Kuan-Ju ; Tai, Mao-Chou...
IEEE Transactions on Electron Devices.  70 (2023)  3 - p. 1089-1094 , 2023
 
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12

Investigation of the Self-Heating Effect in High Performanc..:

Chen, Yu-An ; Zheng, Yu-Zhe ; Chang, Ting-Chang...
IEEE Electron Device Letters.  43 (2022)  8 - p. 1243-1246 , 2022
 
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14

Synthesis and Characterization of Low-Melting-Point Polyami..:

Chen, Yu-Hao ; Huang, Ya-Ting ; Lee, Yi-Huan.
Industrial & Engineering Chemistry Research.  60 (2021)  47 - p. 17072-17082 , 2021
 
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