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Lelis, Aivars J.
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1

AC-Stress Degradation in SiC MOSFETs:

Lelis, Aivars J. ; Habersat, Daniel B.
Materials Science Forum.  1092 (2023)  - p. 151-155 , 2023
Link: https://doi.org/10.4028/..
 
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2

AC-Stress Degradation and Its Anneal in SiC MOSFETs:

Habersat, Daniel B. ; Lelis, Aivars J.
IEEE Transactions on Electron Devices.  69 (2022)  9 - p. 5068-5073 , 2022
Link: https://doi.org/10.1109/..
 
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3

Effect of Dynamic Threshold-Voltage Instability on Dynamic ..:

Lelis, Aivars J. ; Urciuoli, Damian P. ; Schroen, Erik S...
IEEE Transactions on Electron Devices.  69 (2022)  10 - p. 5649-5655 , 2022
Link: https://doi.org/10.1109/..
 
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4

Electron beam-induced crystallization of Al2O3 gate layer o..:

Klingshirn, Christopher J. ; Jayawardena, Asanka ; Dhar, Sarit...
Micron.  140 (2021)  - p. 102954 , 2021
Link: https://doi.org/10.1016/..
 
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5

Analytical electron microscopy of (2¯01) β-Ga2O3/SiO2 and (..:

Klingshirn, Christopher J. ; Jayawardena, Asanka ; Dhar, Sarit...
Journal of Applied Physics.  129 (2021)  19 - p. , 2021
Link: https://doi.org/10.1063/..
 
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6

Towards a Robust Approach to Threshold Voltage Characteriza..:

, In: 2020 IEEE International Reliability Physics Symposium (IRPS),
Habersat, Daniel B. ; Lelis, Aivars J. ; Green, Ronald - p. 1-4 , 2020
Link: https://doi.org/10.1109/..
 
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7

Effects of Pulsed and DC Body-Diode Current Stress on the S..:

Green, Ronald ; Lelis, Aivars J. ; Nouketcha, Franklin L.
Materials Science Forum.  1004 (2020)  - p. 1027-1032 , 2020
Link: https://doi.org/10.4028/..
 
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8

Influence of High-Temperature Bias Stress on Room-Temperatu..:

Habersat, Daniel B. ; Lelis, Aivars J. ; Green, Ronald
Materials Science Forum.  963 (2019)  - p. 757-762 , 2019
Link: https://doi.org/10.4028/..
 
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9

Comparison of SiC MOSFET Characteristics Following Body-Dio..:

Green, Ronald ; Lelis, Aivars J. ; Nouketcha, Franklin L.
Materials Science Forum.  963 (2019)  - p. 583-587 , 2019
Link: https://doi.org/10.4028/..
 
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10

15 kV n-GTOs in 4H-SiC:

Ryu, Sei Hyung ; Lichtenwalner, Daniel J. ; O'Loughlin, Michael...
Materials Science Forum.  963 (2019)  - p. 651-654 , 2019
Link: https://doi.org/10.4028/..
 
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11

Measurement considerations for evaluating BTI effects in Si..:

Habersat, Daniel B. ; Lelis, Aivars J. ; Green, Ronald
Microelectronics Reliability.  81 (2018)  - p. 121-126 , 2018
Link: https://doi.org/10.1016/..
 
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12

SiC MOSFET threshold-stability issues:

Lelis, Aivars J. ; Green, Ronald ; Habersat, Daniel B.
Materials Science in Semiconductor Processing.  78 (2018)  - p. 32-37 , 2018
Link: https://doi.org/10.1016/..
 
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13

Short-Circuit Robustness of SiC Trench MOSFETs:

Green, Ronald ; Urciuoli, Damian ; Lelis, Aivars J.
Materials Science Forum.  924 (2018)  - p. 715-718 , 2018
Link: https://doi.org/10.4028/..
 
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14

Influences of Bias Interruption and Reapplication on High-T..:

Habersat, Daniel B. ; Lelis, Aivars J. ; Green, Ronald
Materials Science Forum.  924 (2018)  - p. 743-747 , 2018
Link: https://doi.org/10.4028/..
 
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15

The Effect of Nitrogen on the 4H-SiC/SiO2 Interface Studied..:

Anders, Mark A. ; Lenahan, Patrick M. ; Lelis, Aivars J.
Materials Science Forum.  924 (2018)  - p. 469-472 , 2018
Link: https://doi.org/10.4028/..
 
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