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Lesecq, Marie
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1

Highlighting the role of 3C–SiC in the performance optimiza..:

Bah, Micka ; Alquier, Daniel ; Lesecq, Marie...
Materials Science in Semiconductor Processing.  171 (2024)  - p. 107977 , 2024
Link: https://doi.org/10.1016/..
 
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2

Performance improvement with non-alloyed ohmic contacts tec..:

Lesecq, Marie ; Fouzi, Yassine ; Abboud, Ali...
Microelectronic Engineering.  276 (2023)  - p. 111998 , 2023
Link: https://doi.org/10.1016/..
 
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3

AlGaN/GaN High Electron Mobility Transistors Grown by MOVPE..:

Lesecq, Marie ; Frayssinet, Eric ; Portail, Marc...
Materials Science Forum.  1062 (2022)  - p. 482-486 , 2022
Link: https://doi.org/10.4028/..
 
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4

Electrical and thermal analysis of AlGaN/GaN HEMTs transfer..:

Abou Daher, Mahmoud ; Lesecq, Marie ; Defrance, Nicolas...
Microwave and Optical Technology Letters.  63 (2021)  9 - p. 2376-2380 , 2021
Link: https://doi.org/10.1002/..
 
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5

Metalorganic Chemical Vapor Phase Epitaxy Growth of Buffer ..:

Frayssinet, Eric ; Nguyen, Luan ; Lesecq, Marie...
physica status solidi (a).  217 (2020)  7 - p. , 2020
Link: https://doi.org/10.1002/..
 
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6

Electrical activity at the AlN/Si Interface: identifying th..:

Bah, Micka ; Valente, Damien ; Lesecq, Marie...
Scientific Reports.  10 (2020)  1 - p. , 2020
Link: https://doi.org/10.1038/..
 
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7

GaN-based SSD structure for THz applications:

, In: 2019 IEEE Asia-Pacific Microwave Conference (APMC),
Agrawal, Manvi ; Nethaji, Dharmarasu ; Radhakrishnan, K... - p. 213-215 , 2019
Link: https://doi.org/10.1109/..
 
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8

2 W mm−1 power density of an AlGaN/GaN HEMT grown on free-s..:

Irekti, Mohamed-Reda ; Lesecq, Marie ; Defrance, Nicolas...
Semiconductor Science and Technology.  34 (2019)  12 - p. 12LT01 , 2019
Link: https://doi.org/10.1088/..
 
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9

Design and Fabrication of Planar Gunn Nanodiodes Based on D..:

, In: 2019 IEEE Asia-Pacific Microwave Conference (APMC),
Mateos, Javier ; Gonzalez, Tomas ; Iniguez-de-la-Torre, Ignacio... - p. 971-973 , 2019
Link: https://doi.org/10.1109/..
 
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10

Recent improvements of flexible GaN-based HEMT technology:

Mhedhbi, Sarra ; Lesecq, Marie ; Altuntas, Philippe...
physica status solidi (a).  214 (2017)  4 - p. 1600484 , 2017
Link: https://doi.org/10.1002/..
 
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11

Influence of AlN Growth Temperature on the Electrical Prope..:

Cordier, Yvon ; Comyn, Rémi ; Frayssinet, Eric...
physica status solidi (a).  215 (2017)  9 - p. , 2017
Link: https://doi.org/10.1002/..
 
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12

Polarization Engineering of Al(Ga)N/GaN HEMT Structures for..:

Rennesson, Stephanie ; Lecourt, Francois ; Defrance, Nicolas...
Materials Science Forum.  806 (2014)  - p. 81-87 , 2014
Link: https://doi.org/10.4028/..
 
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13

A converging route towards very high frequency, mechanicall..:

Lecavelier des Etangs-Levallois, Aurélien ; Chen, Zhenkun ; Lesecq, Marie...
Journal of Applied Physics.  113 (2013)  15 - p. , 2013
Link: https://doi.org/10.1063/..
 
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14

Ultracompact optical filter based on a stub resonator in Ga..:

Maricot, Sophie ; Lesecq, Marie ; Vilcot, Jean-Pierre...
Optics Letters.  34 (2009)  13 - p. 1936 , 2009
Link: https://doi.org/10.1364/..
 
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15

Wide electrical tunability of a GaInAsP/InP microdisk reson..:

Lesecq, Marie ; Maricot, Sophie ; Vilcot, Jean-Pierre.
Optics Letters.  33 (2008)  13 - p. 1467 , 2008
Link: https://doi.org/10.1364/..
 
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