Lettens, J.
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1

The Concept of Safe Operating Area for Gate Dielectrics: th..:

, In: 2023 IEEE International Reliability Physics Symposium (IRPS),
Moens, P. ; Geenen, F. ; De Schepper, L.... - p. 1-5 , 2023
 
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2

Cryogenic-temperature investigation of negative bias stress..:

Masin, F. ; De Santi, C. ; Lettens, J....
Microelectronics Reliability.  138 (2022)  - p. 114720 , 2022
 
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4

A Charge-to-Breakdown (QBD) Approach to SiC Gate Oxide Life..:

, In: 2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD),
Moens, P. ; Franchi, J. ; Lettens, J.... - p. 78-81 , 2020
 
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7

Cryogenic Ultra-Fast Bias Temperature Instability Trap Prof..:

, In: 2022 IEEE 34th International Symposium on Power Semiconductor Devices and ICs (ISPSD),
Geenen, Filip ; Masin, Fabrizio ; Stockman, Arno... - p. 353-356 , 2022
 
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13

Intra- and inter-annual variation of Cd, Zn, Mn and Cu in f..:

Lettens, S. ; Vandecasteele, B. ; De Vos, B...
Science of The Total Environment.  409 (2011)  11 - p. 2306-2316 , 2011
 
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15

Effects of willow stands on heavy metal concentrations and ..:

Vandecasteele, Bart ; Quataert, Paul ; Genouw, Gerrit..
Science of The Total Environment.  407 (2009)  20 - p. 5289-5297 , 2009
 
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