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Liao, Wen-Shiang
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1

Comparison of Fitting Current–Voltage Characteristics Curve..:

Yang, Hsin-Chia ; Chi, Sung-Ching ; Liao, Wen-Shiang
Applied Sciences.  12 (2022)  20 - p. 10519 , 2022
Link: https://doi.org/10.3390/..
 
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2

High-Drain Field Impacting Channel-Length Modulation Effect..:

Wang, Mu-Chun ; Hsieh, Wen-Ching ; Lin, Chii-Ruey...
Crystals.  11 (2021)  3 - p. 262 , 2021
Link: https://doi.org/10.3390/..
 
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3

Punch-through and DIBL Effects Exposing Nano-node SOI FinFE..:

, In: 2019 IEEE 26th International Symposium on Physical and Failure Analysis of Integrated Circuits (IPFA),
Wang, Mu-Chun ; Shen, Tien-Szu ; Bor, Hui-Yun... - p. 1-5 , 2019
Link: https://doi.org/10.1109/..
 
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4

Thermal stress probing the channel-length modulation effect..:

Tuan, Fu-Yuan ; Chen, Chii-Wen ; Wang, Mu-Chun...
Microelectronics Reliability.  83 (2018)  - p. 260-270 , 2018
Link: https://doi.org/10.1016/..
 
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5

Performance characteristics of p-channel FinFETs with varie..:

Liaw, Yue-Gie ; Liao, Wen-Shiang ; Wang, Mu-Chun...
Semiconductors.  51 (2017)  12 - p. 1650-1655 , 2017
Link: https://doi.org/10.1134/..
 
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6

A high aspect ratio silicon-fin FinFET fabricated upon SOI ..:

Liaw, Yue-Gie ; Liao, Wen-Shiang ; Wang, Mu-Chun...
Solid-State Electronics.  126 (2016)  - p. 46-50 , 2016
Link: https://doi.org/10.1016/..
 
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7

High-performance III-V MOSFET with nano-stacked high-k gate..:

Chen, Szu-Hung ; Liao, Wen-Shiang ; Yang, Hsin-Chia...
Nanoscale Research Letters.  7 (2012)  1 - p. , 2012
Link: https://doi.org/10.1186/..
 
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8

Drive current and hot carrier reliability improvements of h..:

Liao, Wen-Shiang ; Wang, Mu-Chun ; Hu, Yongming...
Applied Physics Letters.  99 (2011)  17 - p. , 2011
Link: https://doi.org/10.1063/..
 
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9

Low-Frequency Noise Characteristics of SiGe p-Channel Metal..:

Chen, Yu-Ting ; Chen, Kun-Ming ; Liao, Wen-Shiang..
Japanese Journal of Applied Physics.  48 (2009)  4S - p. 04C042 , 2009
Link: https://doi.org/10.1143/..
 
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10

Logic 90 nm n-Channel Field Effect Transistor Current and S..:

Liao, Wen-Shiang ; Huang, Sheng-Yi ; Tang, Mao-Chyuan...
Japanese Journal of Applied Physics.  47 (2008)  4S - p. 3127 , 2008
Link: https://doi.org/10.1143/..
 
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11

Effects of Hot Carriers on DC and RF Performances of Deep S..:

Tang, Mao-Chyuan ; Fang, Yean-Kuen ; Liao, Wen-Shiang...
Japanese Journal of Applied Physics.  47 (2008)  4S - p. 2633 , 2008
Link: https://doi.org/10.1143/..
 
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12

Effect of Mixed-Mode Electrical Stress on High-Frequency an..:

Hung, Cheng-Chou ; Liao, Wen-Shiang ; Huang, Sheng-Yi...
Japanese Journal of Applied Physics.  47 (2008)  4S - p. 2872 , 2008
Link: https://doi.org/10.1143/..
 
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13

Electrical stress effect on RF power characteristics of SiG..:

Huang, Sheng-Yi ; Chen, Kun-Ming ; Huang, Guo-Wei...
Microelectronics Reliability.  48 (2008)  2 - p. 193-199 , 2008
Link: https://doi.org/10.1016/..
 
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14

Extraction of Correlated Base and Collector Current RF Nois..:

, In: 2007 IEEE Conference on Electron Devices and Solid-State Circuits,
Chen, Kun-Ming ; Huang, Guo-Wei ; Chen, Han-Yu... - p. None , 2007
Link: https://doi.org/10.1109/..
 
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15

Interfacial interaction between Al-1%Si and phosphorus-dope..:

Liao, Wen-Shiang ; Lee, Si-Chen
Journal of Applied Physics.  81 (1997)  12 - p. 7793-7797 , 1997
Link: https://doi.org/10.1063/..
 
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