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Liberis, J.
261
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Online (261)
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Articles (Online) (140)
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1
Self-formation of high-field domain in epitaxial ZnO and it..:
Šermukšnis, E.
;
Liberis, J.
;
Šimukovič, A.
...
Applied Physics Letters. 118 (2021) 25 - p. , 2021
Link:
https://doi.org/10.1063/..
?
2
Terahertz oscillations in gallium nitride quantum-well chan..:
Ramonas, M.
;
Liberis, J.
;
Šimukovič, A.
...
Journal of Applied Physics. 128 (2020) 5 - p. 055702 , 2020
Link:
https://doi.org/10.1063/..
?
3
Electron drift velocity in wurtzite ZnO at high electric fi..:
Ardaravičius, L.
;
Kiprijanovič, O.
;
Ramonas, M.
...
Journal of Applied Physics. 126 (2019) 18 - p. , 2019
Link:
https://doi.org/10.1063/..
?
4
Hot LO-phonon limited electron transport in ZnO/MgZnO chann..:
Šermukšnis, E.
;
Liberis, J.
;
Matulionis, A.
...
Journal of Applied Physics. 123 (2018) 17 - p. , 2018
Link:
https://doi.org/10.1063/..
?
5
Threshold field for soft damage and electron drift velocity..:
Ardaravičius, L
;
Kiprijanovič, O
;
Liberis, J
...
Semiconductor Science and Technology. 30 (2015) 10 - p. 105016 , 2015
Link:
https://doi.org/10.1088/..
?
6
Hot-electron energy relaxation time in Ga-doped ZnO films:
Šermukšnis, E.
;
Liberis, J.
;
Ramonas, M.
...
Journal of Applied Physics. 117 (2015) 6 - p. , 2015
Link:
https://doi.org/10.1063/..
?
7
Hot-electron real-space transfer and longitudinal transport..:
Šermukšnis, E
;
Liberis, J
;
Matulionis, A
...
Semiconductor Science and Technology. 30 (2015) 3 - p. 035003 , 2015
Link:
https://doi.org/10.1088/..
?
8
Hot-phonon lifetime in Al0.23Ga0.77N/GaN channels:
Liberis, J
;
Ramonas, M
;
Šermukšnis, E
...
Semiconductor Science and Technology. 29 (2014) 4 - p. 045018 , 2014
Link:
https://doi.org/10.1088/..
?
9
High frequency noise of epitaxial graphene grown on sapphir:
Ardaravicˇius, L.
;
Liberis, J.
;
Šermukšnis, E.
...
physica status solidi (RRL) – Rapid Research Letters. 7 (2013) 5 - p. 348-351 , 2013
Link:
https://doi.org/10.1002/..
?
10
Plasmon-controlled optimum gate bias for GaN heterostructur..:
Šimukovič, A
;
Matulionis, A
;
Liberis, J
...
Semiconductor Science and Technology. 28 (2013) 5 - p. 055008 , 2013
Link:
https://doi.org/10.1088/..
?
11
Window for better reliability of nitride heterostructure fi..:
Matulionis, A.
;
Liberis, J.
;
Šermukšnis, E.
...
Microelectronics Reliability. 52 (2012) 9-10 - p. 2149-2152 , 2012
Link:
https://doi.org/10.1016/..
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12
Hot-electron drift velocity in AlGaN/AlN/AlGaN/GaN camelbac..:
Ardaravičius, L
;
Kiprijanovič, O
;
Liberis, J
...
Semiconductor Science and Technology. 27 (2012) 12 - p. 122001 , 2012
Link:
https://doi.org/10.1088/..
?
13
Ultrafast decay of hot phonons in an AlGaN/AlN/AlGaN/GaN ca..:
Leach, J. H.
;
Wu, M.
;
Morkoç, H.
...
Journal of Applied Physics. 110 (2011) 10 - p. , 2011
Link:
https://doi.org/10.1063/..
?
14
Camelback channel for fast decay of LO phonons in GaN heter..:
Šermukšnis, E.
;
Liberis, J.
;
Ramonas, M.
...
Applied Physics Letters. 99 (2011) 4 - p. , 2011
Link:
https://doi.org/10.1063/..
?
15
Effect of hot phonon lifetime on electron velocity in InAlN..:
Leach, J. H.
;
Zhu, C. Y.
;
Wu, M.
...
Applied Physics Letters. 96 (2010) 13 - p. , 2010
Link:
https://doi.org/10.1063/..
1-15