E-LIB Suche - Ergebnisse für: Lichtenwalner, Daniel J.

1

Hole-Induced Threshold Voltage Instability Under High Posit..:

, In: 2024 IEEE International Reliability Physics Symposium (IRPS),

Biswas, Ayan K. ; Lichtenwalner, Daniel J. ; Park, Jae... - p. 1-5 , 2024

Link: https://doi.org/10.1109/..

2

Measurement of the $D_{it}$ Changes Under BTI-Stress in 4H-..:

, In: 2024 IEEE International Reliability Physics Symposium (IRPS),

Steinmann, Philipp ; Lichtenwalner, Daniel J. ; Stein, Shane... - p. P58.SiC-1-P58.SiC-4 , 2024

Link: https://doi.org/10.1109/..

3

Study of Dopant Activation and Ionization for Phosphorus in..:

Das, Suman ; Lichtenwalner, Daniel J. ; Dixit, Hemant...
Journal of Electronic Materials. 53 (2024) 6 - p. 2806-2810 , 2024

Link: https://doi.org/10.1007/..

4

Temperature Dependent Electrical Properties of N-Type 4H-Si..:

Lichtenwalner, Daniel J. ; Park, Jae Hyung ; Rogers, Steven...
Materials Science Forum. 1089 (2023) - p. 3-7 , 2023

Link: https://doi.org/10.4028/..

5

Temperature Dependent Mobility Model for Predictive TCAD Si..:

Dixit, Hemant ; Lichtenwalner, Daniel J. ; Scholtze, Andreas...
Materials Science Forum. 1090 (2023) - p. 153-157 , 2023

Link: https://doi.org/10.4028/..

6

Outlook for Dielectric/SiC Interfaces for Future Generation..:

Lichtenwalner, Daniel J. ; Ryu, Sei Hyung ; Hull, Brett..
Materials Science Forum. 1090 (2023) - p. 93-100 , 2023

Link: https://doi.org/10.4028/..

7

Temperature dependence of avalanche breakdown in 4H-SiC dev..:

Steinmann, Philipp ; Hull, Brett ; Ji, In-Hwan..
Journal of Applied Physics. 133 (2023) 23 - p. , 2023

Link: https://doi.org/10.1063/..

8

High Temperature and High Humidity Reliability Evaluation o..:

, In: 2023 IEEE International Reliability Physics Symposium (IRPS),

Ji, In-Hwan ; Mathew, Anoop ; Park, Jae-Hyung... - p. 1-4 , 2023

Link: https://doi.org/10.1109/..

9

Modeling of the Snappy, and Soft Reverse Recovery of SiC MO..:

, In: 2023 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS),

Rashid, Arman Ur ; Brooks, Britt ; Manz, Steven.. - p. 310-313 , 2023

Link: https://doi.org/10.1109/..

10

650V Vertical SiC MOSFETs and Diodes with Improved Terrestr..:

Lichtenwalner, Daniel J. ; Ganguly, Satyaki ; Fetzer, Brian...
Key Engineering Materials. 948 (2023) - p. 95-99 , 2023

Link: https://doi.org/10.4028/..

11

Reliability and Standardization for SiC Power Devices:

Gajewski, Donald A. ; Ganguly, Satyaki ; Lichtenwalner, Daniel J....
Materials Science Forum. 1092 (2023) - p. 179-186 , 2023

Link: https://doi.org/10.4028/..

12

Erratum: "Temperature dependence of avalanche breakdown in ..:

Steinmann, Philipp ; Hull, Brett ; Ji, In-Hwan..
Journal of Applied Physics. 134 (2023) 23 - p. , 2023

Link: https://doi.org/10.1063/..

13

Negative Gate Bias TDDB evaluation of n-Channel SiC Vertica..:

, In: 2022 IEEE International Reliability Physics Symposium (IRPS),

Ganguly, Satyaki ; Lichtenwalner, Daniel J. ; Isaacson, Caleb... - p. 8B.1-1-8B.1-6 , 2022

Link: https://doi.org/10.1109/..

14

Gate Bias Effects on SiC MOSFET Terrestrial-Neutron Single-..:

Lichtenwalner, Daniel J. ; Gajewski, Donald A. ; Ryu, Sei Hyung...
Materials Science Forum. 1062 (2022) - p. 463-467 , 2022

Link: https://doi.org/10.4028/..

15

Improvements to the Analytical Model to Describe UIS Events:

Steinmann, Philipp ; Ganguly, Satyaki ; Hull, Brett...
IEEE Transactions on Electron Devices. 69 (2022) 7 - p. 3848-3853 , 2022

Link: https://doi.org/10.1109/..