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Lilenko, Yu. V.
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1

Formation of a submicron GaAs MESFET gate using a four-laye..:

Arykov, V. S. ; Gavrilova, A. M. ; Dedkova, O. A...
Russian Microelectronics.  41 (2012)  3 - p. 162-168 , 2012
Link: https://doi.org/10.1134/..
 
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2

The effect of hydrogenation on the photoconductivity of ion..:

Kagadei, V. A. ; Lilenko, Yu. V. ; Shirokova, L. S..
Technical Physics Letters.  26 (2000)  4 - p. 269-271 , 2000
Link: https://doi.org/10.1134/..
 
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3

Suppression of parasitic backgating by hydrogenation of ion..:

Kagadei, V. A. ; Lilenko, Yu. V. ; Shirokova, L. S..
Technical Physics Letters.  25 (1999)  7 - p. 522-523 , 1999
Link: https://doi.org/10.1134/..
 
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4

Radiation-induced defects in implanted Hg1–xCdxTe crystals:

Lilenko, Yu. V. ; Shastov, K. V. ; Petrov, A. S....
Physica Status Solidi (a).  113 (1989)  2 - p. 285-294 , 1989
Link: https://doi.org/10.1002/..
 
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5

Radiation defects in Ar+-ion-implanted Hg1?xCdxTe crystals:

Petrov, A. S. ; Kulikauskas, V. S. ; Lilenko, Yu. V....
Soviet Physics Journal.  31 (1988)  12 - p. 1027-1032 , 1988
Link: https://doi.org/10.1007/..
 
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6

Investigation of radiation defects in electron irradiated H..:

Voitsekhovskii, A. V. ; Kokhanenko, A. P. ; Petrov, A. S...
Crystal Research and Technology.  23 (1988)  2 - p. 237-241 , 1988
Link: https://doi.org/10.1002/..
 
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7

High temperature electron irradiation and isochronal anneal..:

Voitsekhovskii, A. V. ; Lilenko, Yu. V. ; Kokhanenko, A. P..
Radiation Effects.  66 (1982)  1-2 - p. 79-84 , 1982
Link: https://doi.org/10.1080/..
 
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8

Recombination effects in narrow-gap semiconductors p-Hg1−xC..:

Voitsekhovskii, A. V. ; Lilenko, Yu. V.
Physica Status Solidi (a).  67 (1981)  2 - p. 381-386 , 1981
Link: https://doi.org/10.1002/..
 
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9

Investigation of photoelectric and recombination characteri..:

Lilenko, Yu. V.
Soviet Physics Journal.  23 (1980)  7 - p. 641-644 , 1980
Link: https://doi.org/10.1007/..
 
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10

High temperature defects in electron irradiated semiconduct..:

Voitsehovski, A.V. ; Broudnyi, V.N. ; Lilenko, Yu.V...
Solid State Communications.  31 (1979)  2 - p. 105-108 , 1979
Link: https://doi.org/10.1016/..
 
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11

Properties of an impurity photoresistor with ultrafrequency..:

Antonov, V. V. ; Voitsekhovskii, A. V. ; Lilenko, Yu. V..
Soviet Physics Journal.  20 (1977)  8 - p. 1085-1087 , 1977
Link: https://doi.org/10.1007/..
 
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12

Threshold sensitivity at the ? = 10.6 ? wavelength of a pho..:

Voitsekhovskii, A. V. ; Lanskaya, O. G. ; Lilenko, Yu. V..
Soviet Physics Journal.  17 (1974)  6 - p. 858-859 , 1974
Link: https://doi.org/10.1007/..
 
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13

Investigation of gallium arsenide containing coppee as a ma..:

Voisekhovskii, A. V. ; Zakharova, G. A. ; Krivov, M. A....
Soviet Physics Journal.  17 (1974)  2 - p. 184-187 , 1974
Link: https://doi.org/10.1007/..
 
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14

Crystal Research and Technology 

Journal of Experimental and Industrial Crystallography ; Vo...  Crystal Research and Technology ; Volume 23, Number 2
Abbé, J ; Aleksandrov, L ; Alemaykin, F... - Reprint 2021 . , [2022]
Link: https://doi.org/10.1515/..
 
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15

Influence of different organic fuels on the phase compositi..:

Zhuravlev, V.A. ; Itin, V.I. ; Minin, R.V....
Journal of Alloys and Compounds.  771 (2019)  - p. 686-698 , 2019
Link: https://doi.org/10.1016/..
 
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