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Lime, F.
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1

A new analytical method for modeling a 2D electrostatic pot..:

Lime, F. ; Iñiguez, B. ; Kloes, A.
Journal of Applied Physics.  135 (2024)  4 - p. , 2024
Link: https://doi.org/10.1063/..
 
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2

Crystalline-like temperature dependence of the electrical c..:

Estrada, M. ; Hernandez-Barrios, Y. ; Cerdeira, A....
Solid-State Electronics.  135 (2017)  - p. 43-48 , 2017
Link: https://doi.org/10.1016/..
 
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3

Experimentally verified drain‐current model for variable ba..:

Moldovan, O. ; Lime, F. ; Barraud, S....
Electronics Letters.  51 (2015)  17 - p. 1364-1366 , 2015
Link: https://doi.org/10.1049/..
 
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4

Modeling of low frequency noise in FD SOI MOSFETs:

El Husseini, J. ; Martinez, F. ; Valenza, M....
Solid-State Electronics.  90 (2013)  - p. 116-120 , 2013
Link: https://doi.org/10.1016/..
 
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5

New numerical low frequency noise model for front and burie..:

El Husseini, J. ; Martinez, F. ; Armand, J....
Microelectronic Engineering.  88 (2011)  7 - p. 1286-1290 , 2011
Link: https://doi.org/10.1016/..
 
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6

A physical compact DC drain current model for long-channel ..:

Lime, F. ; Ritzenthaler, R. ; Ricoma, M....
Solid-State Electronics.  57 (2011)  1 - p. 61-66 , 2011
Link: https://doi.org/10.1016/..
 
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7

An innovative NEMS pressure sensor approach based on hetero..:

Xu, X. ; Bercu, B. ; Lime, F..
Microelectronic Engineering.  87 (2010)  3 - p. 406-411 , 2010
Link: https://doi.org/10.1016/..
 
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8

Low temperature characterization of effective mobility in u..:

Lime, F. ; Andrieu, F. ; Derix, J....
Solid-State Electronics.  50 (2006)  4 - p. 644-649 , 2006
Link: https://doi.org/10.1016/..
 
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9

Carrier mobility in advanced CMOS devices with metal gate a..:

Lime, F. ; Oshima, K. ; Cassé, M....
Solid-State Electronics.  47 (2003)  10 - p. 1617-1621 , 2003
Link: https://doi.org/10.1016/..
 
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10

Characterization of effective mobility by split C(V) techni..:

Lime, F ; Guiducci, C ; Clerc, R...
Solid-State Electronics.  47 (2003)  7 - p. 1147-1153 , 2003
Link: https://doi.org/10.1016/..
 
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11

Charge trapping in SiO2/HfO2/TiN gate stack:

LIME, F
Microelectronics Reliability.  43 (2003)  9-11 - p. 1445-1448 , 2003
Link: https://doi.org/10.1016/..
 
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12

New approach for the gate current source–drain partition mo..:

Romanjek, K. ; Lime, F. ; Ghibaudo, G..
Solid-State Electronics.  47 (2003)  10 - p. 1657-1661 , 2003
Link: https://doi.org/10.1016/..
 
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13

Stress induced leakage current at low field in ultra thin o..:

Lime, F. ; Ghibauda, G. ; Guégan, G.
Microelectronics Reliability.  41 (2001)  9-10 - p. 1421-1425 , 2001
Link: https://doi.org/10.1016/..
 
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14

Impact of gate tunneling leakage on the operation of NMOS t..:

Lime, F ; Clerc, R ; Ghibaudo, G..
Microelectronic Engineering.  59 (2001)  1-4 - p. 119-125 , 2001
Link: https://doi.org/10.1016/..
 
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15

Temperature enhancement of terahertz responsivity of plasma..:

Kucharski, K ; Marczewski, J ; Lime, F...
http://hdl.handle.net/20.500.11797/PC190.  , 2012
Link: https://hdl.handle.net/2..
 
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