Lin, Dennis
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6

Superior electrostatic control in uniform monolayer MoS2 sc..:

, In: 2021 IEEE International Electron Devices Meeting (IEDM),
Shi, Yuanyuan ; Groven, Benjamin ; Smets, Quentin... - p. 37.1.1-37.1.4 , 2021
 
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11

Contact Interface Characterization of Graphene contacted Mo..:

, In: 2021 IEEE International Interconnect Technology Conference (IITC),
 
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12

Dual gate synthetic MoS2 MOSFETs with 4.56µF/cm2 channel ca..:

, In: 2021 IEEE International Electron Devices Meeting (IEDM),
Wu, Xiangyu ; Cott, Daire ; Lin, Zaoyang... - p. 7.4.1-7.4.4 , 2021
 
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14

Scaling of double-gated WS2 FETs to sub-5nm physical gate l..:

, In: 2021 IEEE International Electron Devices Meeting (IEDM),
Smets, Quentin ; Schram, Tom ; Verreck, Devin... - p. 34.2.1-34.2.4 , 2021
 
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