E-LIB Suche - Ergebnisse für: Lin, Yueh Chin

1

Study of p-GaN Gate MOS-HEMT with Al2O3 Insulator for High-..:

Huang, Kuan Ning ; Lin, Yueh Chin ; Wu, Chieh Ying...
Journal of Electronic Materials. 52 (2023) 4 - p. 2865-2870 , 2023

Link: https://doi.org/10.1007/..

2

Study of tri-gate AlGaN/GaN MOS-HEMTs for power application:

Huang, Kuan Ning ; Lin, Yueh Chin ; Lee, Jin Hwa...
Micro and Nano Engineering. 9 (2020) - p. 100073 , 2020

Link: https://doi.org/10.1016/..

3

WITHDRAWN: Study of tri-gate AlGaN/GaN MOS-HEMTs for power ..:

Huang, Kuan Ning ; Lin, Yueh Chin ; Lee, Jin Hwa...
Microelectronic Engineering. , 2020

Link: https://doi.org/10.1016/..

4

Evaluation of an InAs HEMT with source-connected field plat..:

Yao, Jing Neng ; Lin, Yueh Chin ; Lin, Min Song...
Solid-State Electronics. 157 (2019) - p. 55-60 , 2019

Link: https://doi.org/10.1016/..

5

Effect of surface passivation by a low pressure and tempera..:

Liao, Shun Sing ; Chuang, Chuan Lung ; Lin, Yueh Chin...
Thin Solid Films. 660 (2018) - p. 1-9 , 2018

Link: https://doi.org/10.1016/..

6

Efficiency Enhancement of Multicrystalline Silicon Solar Ce..:

Liao, Shun Sing ; Lin, Yueh Chin ; Chuang, Chuan Lung.
International Journal of Photoenergy. 2017 (2017) - p. 1-6 , 2017

Link: https://doi.org/10.1155/..

7

Evaluation of AlGaN/GaN metal–oxide–semicondutor high-elect..:

Chiu, Yu Sheng ; Luc, Quang Ho ; Lin, Yueh Chin...
Japanese Journal of Applied Physics. 56 (2017) 9 - p. 094101 , 2017

Link: https://doi.org/10.7567/..

8

Growth and characterization of high quality N-type GaSb/GaA..:

Hsiao, Chih Jen ; Kakkerla, Ramesh Kumar ; Chang, Po Chun...
Applied Physics Letters. 111 (2017) 16 - p. , 2017

Link: https://doi.org/10.1063/..

9

High-permitivity cerium oxide prepared by molecular beam de..:

Chiu, Yu Sheng ; Liao, Jen Ting ; Lin, Yueh Chin...
Japanese Journal of Applied Physics. 55 (2016) 5 - p. 051001 , 2016

Link: https://doi.org/10.7567/..

10

Band Alignment Parameters of Al2O3/InSb Metal–Oxide–Semicon..:

Trinh, Hai Dang ; Nguyen, Minh Thuy ; Lin, Yueh Chin...
Applied Physics Express. 6 (2013) 6 - p. 061202 , 2013

Link: https://doi.org/10.7567/..

11

Electrical Characteristics of HfO2 and La2O3 Gate Dielectri..:

Funamizu, Kiyohisa ; Lin, Yueh Chin ; Kakushima, Kuniyuki...
ECS Transactions. 25 (2009) 6 - p. 265-270 , 2009

Link: https://doi.org/10.1149/..

12

High-Performance In0.53Ga0.47 As FinFETs for logic and RF A..:

, In: 2019 Compound Semiconductor Week (CSW),

Chang, Edward Yi ; Luc, Ho Quang ; Lin, Chin Yueh - p. 1-1 , 2019

Link: https://doi.org/10.1109/..

13

High linearity AlGaN/GaN HEMTs with Au-free Ti/Al/Ni/Ti ohm..:

Hsu, Che-Wei ; Lin, Yueh-Chin ; Lee, Shao-Lun...
Applied Physics Express. 17 (2024) 7 - p. 071001 , 2024

Link: https://doi.org/10.35848..

14

Improvement of AlGaN/GaN HEMT Noise Figure Using Thick Cu M..:

Tseng, Howie ; Lin, Yueh-Chin ; Cheng, Chieh...
IEEE Journal of the Electron Devices Society. 12 (2024) - p. 268-274 , 2024

Link: https://doi.org/10.1109/..

15

Over 10W/mm High Power Density AlGaN/GaN HEMTs With Small G..:

Lee, Ming-Wen ; Lin, Yueh-Chin ; Chang, Po-Sheng...
IEEE Journal of the Electron Devices Society. 11 (2023) - p. 311-318 , 2023

Link: https://doi.org/10.1109/..