Lin, Zone-Ching
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2

Correction to: Establishing a theoretical model for abrasiv..:

Lin, Zone-Ching ; Wang, Ren-Yuan ; Jhang, Zih-Wun
The International Journal of Advanced Manufacturing Technology.  95 (2018)  9-12 - p. 4685-4686 , 2018
 
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4

Investigatory nanoscale thickness of the chemical reaction ..:

Lin, Zone-Ching ; Ding, Hao-Yang ; Ma, Shih-Hung
Journal of Materials Science: Materials in Electronics.  28 (2017)  17 - p. 13041-13052 , 2017
 
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5

Combination of improved cosine similarity and patent attrib..:

Lin, Zone-Ching ; Wu, De-Wei ; Hong, Guo-En
Advanced Engineering Informatics.  30 (2016)  1 - p. 26-38 , 2016
 
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6

Establishing a theoretical model for abrasive removal depth..:

Lin, Zone-Ching ; Wang, Ren-Yuan ; Jhang, Zih-Wun
The International Journal of Advanced Manufacturing Technology.  95 (2016)  9-12 - p. 4671-4683 , 2016
 
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9

Abrasive removal depth for polishing a sapphire wafer by a ..:

Lin, Zone-Ching ; Wang, Ren-Yuan
The International Journal of Advanced Manufacturing Technology.  74 (2014)  1-4 - p. 25-36 , 2014
 
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11

A study of estimating cutting depth for multi-pass nanoscal..:

Lin, Zone-Ching ; Hsu, Ying-Chih
Applied Surface Science.  258 (2012)  10 - p. 4513-4522 , 2012
 
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12

A calculating method for the fewest cutting passes on sapph..:

Lin, Zone-Ching ; Hsu, Ying-Chih
Journal of Materials Processing Technology.  212 (2012)  11 - p. 2321-2331 , 2012
 
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13

A study of material removal amount of sapphire wafer in app..:

Lin, Zone-Ching ; Huang, Wei-Shuen ; Tsai, Ju-Shiau
Journal of Mechanical Science and Technology.  26 (2012)  8 - p. 2353-2364 , 2012
 
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15

Distribution of polishing times for a wafer with different ..:

Lin, Zone-Ching ; Chen, Chein-Chung
Surface and Coatings Technology.  204 (2010)  20 - p. 3101-3107 , 2010
 
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