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Linten, D.
205  results:
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1

Total-Ionizing-Dose Effects in IGZO Thin-Film Transistors W..:

Guo, Zixiang ; Zhang, En Xia ; Chasin, A....
IEEE Transactions on Nuclear Science.  71 (2024)  4 - p. 461-468 , 2024
Link: https://doi.org/10.1109/..
 
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2

Reliability challenges in Forksheet Devices: (Invited Paper:

, In: 2023 IEEE International Reliability Physics Symposium (IRPS),
Bury, E. ; Vandemaele, M. ; Franco, J.... - p. 1-8 , 2023
Link: https://doi.org/10.1109/..
 
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3

Total-Ionizing-Dose Effects in IGZO Thin-Film Transistors:

Guo, Zixiang ; Li, Kan ; Li, Xun...
IEEE Transactions on Nuclear Science.  70 (2023)  8 - p. 2002-2007 , 2023
Link: https://doi.org/10.1109/..
 
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4

Enabling Active Backside Technology for ESD and LU Reliabil..:

, In: 2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits),
Serbulova, K. ; Chen, S.-H. ; Hellings, G.... - p. 431-432 , 2022
Link: https://doi.org/10.1109/..
 
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5

Low-temperature atomic and molecular hydrogen anneals for e..:

, In: 2021 IEEE International Electron Devices Meeting (IEDM),
Franco, J. ; Arimura, H. ; de Marneffe, J.-F.... - p. 31.4.1-31.4.4 , 2021
Link: https://doi.org/10.1109/..
 
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6

The impact of self-heating and its implications on hot-carr..:

Tyaginov, S. ; Makarov, A. ; Chasin, A....
Microelectronics Reliability.  122 (2021)  - p. 114156 , 2021
Link: https://doi.org/10.1016/..
 
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7

On the impact of buffer and GaN-channel thickness on curren..:

, In: 2021 IEEE International Reliability Physics Symposium (IRPS),
Putcha, V. ; Cheng, L. ; Alian, A.... - p. 1-8 , 2021
Link: https://doi.org/10.1109/..
 
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8

Detailed low frequency noise assessment on GAA NW n-channel..:

Cretu, B. ; Bordin, A. ; Simoen, E....
Solid-State Electronics.  181-182 (2021)  - p. 108029 , 2021
Link: https://doi.org/10.1016/..
 
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9

A BSIM-Based Predictive Hot-Carrier Aging Compact Model:

, In: 2021 IEEE International Reliability Physics Symposium (IRPS),
Xiang, Y. ; Tyaginov, S. ; Vandemaele, M.... - p. 1-9 , 2021
Link: https://doi.org/10.1109/..
 
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10

Low frequency noise analysis on Si/SiGe superlattice I/O n-..:

Boudier, D. ; Cretu, B. ; Simoen, E....
Solid-State Electronics.  168 (2020)  - p. 107732 , 2020
Link: https://doi.org/10.1016/..
 
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11

Positive bias temperature instability of HfO2-based gate st..:

Claes, D. ; Franco, J. ; Collaert, N...
Journal of Applied Physics.  128 (2020)  10 - p. , 2020
Link: https://doi.org/10.1063/..
 
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12

Quantum Mechanical Charge Trap Modeling to Explain BTI at C..:

, In: 2020 IEEE International Reliability Physics Symposium (IRPS),
Michl, J. ; Grill, A. ; Claes, D.... - p. 1-6 , 2020
Link: https://doi.org/10.1109/..
 
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13

Reliability and Variability of Advanced CMOS Devices at Cry..:

, In: 2020 IEEE International Reliability Physics Symposium (IRPS),
Grill, A. ; Bury, E. ; Michl, J.... - p. 1-6 , 2020
Link: https://doi.org/10.1109/..
 
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14

On the impact of mechanical stress on gate oxide trapping:

, In: 2020 IEEE International Reliability Physics Symposium (IRPS),
Kruv, A. ; Kaczer, B. ; Grill, A... - p. 1-5 , 2020
Link: https://doi.org/10.1109/..
 
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15

Defect profiling in FEFET Si:HfO2 layers:

O'Sullivan, B. J. ; Putcha, V. ; Izmailov, R....
Applied Physics Letters.  117 (2020)  20 - p. , 2020
Link: https://doi.org/10.1063/..
 
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