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Linten, Dimitri
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1

Fault Attack Investigation on TaOx Resistive-RAM for Cyber ..:

Kumar, Ankit ; Degraeve, Robin ; Beckers, Arthur...
IEEE Transactions on Electron Devices.  70 (2023)  8 - p. 4170-4177 , 2023
Link: https://doi.org/10.1109/..
 
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2

Negative Bias-Temperature Instabilities and Low-Frequency N..:

Luo, Xuyi ; Zhang, En Xia ; Wang, Peng Fei...
IEEE Transactions on Device and Materials Reliability.  23 (2023)  1 - p. 153-161 , 2023
Link: https://doi.org/10.1109/..
 
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3

A Pragmatic Model to Predict Future Device Aging:

Brown, James ; Tok, Kean Hong ; Gao, Rui...
IEEE Access.  11 (2023)  - p. 127725-127736 , 2023
Link: https://doi.org/10.1109/..
 
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4

Effects of Geometry and Cycling on the Radiation Response o..:

Cao, Jingchen ; Wynocker, Isabella ; Zhang, En Xia...
IEEE Transactions on Nuclear Science.  70 (2023)  4 - p. 634-640 , 2023
Link: https://doi.org/10.1109/..
 
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5

ESD nMOSFETs in Advanced Bulk FinFET Technology With Dual S..:

Chen, Wen-Chieh ; Chen, Shih-Hung ; Chiarella, Thomas...
IEEE Transactions on Electron Devices.  69 (2022)  9 - p. 5357-5362 , 2022
Link: https://doi.org/10.1109/..
 
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6

Negative-Bias-Stress and Total-Ionizing-Dose Effects in Dee..:

Rony, M. W. ; Zhang, En Xia ; Toguchi, Shintaro...
IEEE Transactions on Nuclear Science.  69 (2022)  3 - p. 299-306 , 2022
Link: https://doi.org/10.1109/..
 
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7

TID Effects in Highly Scaled Gate-All-Around Si Nanowire CM..:

Bonaldo, Stefano ; Gorchichko, Mariia ; Zhang, En Xia...
IEEE Transactions on Nuclear Science.  69 (2022)  7 - p. 1444-1452 , 2022
Link: https://doi.org/10.1109/..
 
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8

Deep Understanding of Electron Beam Effects on 2D Layered S..:

Lee, Kookjin ; Ji, Hyunjin ; Kim, Yanghee...
Advanced Materials Interfaces.  9 (2022)  9 - p. , 2022
Link: https://doi.org/10.1002/..
 
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9

HBM and CDM ESD Performance of Advanced Silicon Photonic Co..:

, In: 2021 43rd Annual EOS/ESD Symposium (EOS/ESD),
Chen, Shih-Hung ; Karp, James ; Simicic, Marko... - p. 1-7 , 2021
Link: https://doi.org/10.23919..
 
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10

Cyclic Thermal Effects on Devices of Two‐Dimensional Layere..:

Kim, Yeonsu ; Kaczer, Ben ; Verreck, Devin...
Advanced Electronic Materials.  7 (2021)  9 - p. 2100348 , 2021
Link: https://doi.org/10.1002/..
 
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11

Discussion on the Figures of Merit of Identified Traps Loca..:

Cretu, Bogdan ; Nafaa, Beya ; Simoen, Eddy...
ECS Transactions.  97 (2020)  5 - p. 45-51 , 2020
Link: https://doi.org/10.1149/..
 
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12

Understanding and empirical fitting the breakdown of MgO in..:

, In: 2020 IEEE International Reliability Physics Symposium (IRPS),
Van Beek, Simon ; O'Sullivan, Barry J. ; Couet, Sebastien... - p. 1-5 , 2020
Link: https://doi.org/10.1109/..
 
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13

Electrostatic discharge robustness of amorphous indium-gall..:

Simicic, Marko ; Ashif, Nowab Reza ; Hellings, Geert...
Microelectronics Reliability.  108 (2020)  - p. 113632 , 2020
Link: https://doi.org/10.1016/..
 
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14

Correlated Time-0 and Hot-Carrier Stress Induced FinFET Par..:

Makarov, Alexander ; Roussel, Philippe ; Bury, Erik...
Micromachines.  11 (2020)  7 - p. 657 , 2020
Link: https://doi.org/10.3390/..
 
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15

On the impact of Gate field-plate length and barrier layer ..:

, In: 2020 IEEE International Integrated Reliability Workshop (IIRW),
Lin, Chien-Yu ; Putcha, Vamsi ; Alian, Alireza... - p. 1-7 , 2020
Link: https://doi.org/10.1109/..
 
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