I agree that this site is using cookies. You can find further informations here.
X
Litrico, G.
113  results:
Search for persons X
?
1

Nuclear fragment identification with ΔE-E telescopes exploi..:

Ciampi, C. ; Pasquali, G. ; Altana, C....
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment.  925 (2019)  - p. 60-69 , 2019
Link: https://doi.org/10.1016/..
 
?
2

Time resolved X-ray emission diagnostics in an axis-symmetr..:

Castro, G. ; Muoio, A. ; Mascali, D....
Journal of Instrumentation.  14 (2019)  10 - p. C10035-C10035 , 2019
Link: https://doi.org/10.1088/..
 
?
3

Integration of heat production and thermal comfort models i..:

Aluisio, B. ; Dicorato, M. ; Forte, G...
Sustainable Energy, Grids and Networks.  16 (2018)  - p. 37-54 , 2018
Link: https://doi.org/10.1016/..
 
?
4

From thin film to bulk 3C-SiC growth: Understanding the mec..:

La Via, F. ; Severino, A. ; Anzalone, R....
Materials Science in Semiconductor Processing.  78 (2018)  - p. 57-68 , 2018
Link: https://doi.org/10.1016/..
 
?
5

Silicon Carbide detectors for nuclear physics experiments a..:

Litrico, G ; Tudisco, S ; La Via, F...
Journal of Physics: Conference Series.  1056 (2018)  - p. 012032 , 2018
Link: https://doi.org/10.1088/..
 
?
6

Growing bulk-like 3C-SiC from seeding material produced by ..:

Schuh, P. ; Arzig, M. ; Litrico, G....
physica status solidi (a).  214 (2017)  4 - p. 1600429 , 2017
Link: https://doi.org/10.1002/..
 
?
7

Carbonization and transition layer effects on 3C-SiC film r..:

Anzalone, R. ; Litrico, G. ; Piluso, N....
Journal of Crystal Growth.  473 (2017)  - p. 11-19 , 2017
Link: https://doi.org/10.1016/..
 
?
8

Role of interfaces on the stability and electrical properti..:

Mio, A. M. ; Privitera, S. M. S. ; Bragaglia, V....
Scientific Reports.  7 (2017)  1 - p. , 2017
Link: https://doi.org/10.1038/..
 
?
9

Sublimation growth of bulk 3C-SiC using 3C-SiC-on-Si (1 0 0..:

Schuh, P. ; Schöler, M. ; Wilhelm, M....
Journal of Crystal Growth.  478 (2017)  - p. 159-162 , 2017
Link: https://doi.org/10.1016/..
 
?
10

High growth rate 3C-SiC growth: from hetero-epitaxy to homo..:

La Via, F. ; Litrico, G. ; Anzalone, R....
MRS Advances.  1 (2016)  54 - p. 3643-3647 , 2016
Link: https://doi.org/10.1557/..
 
?
11

3C-SiC bulk sublimation growth on CVD hetero-epitaxial seed..:

, In: 2016 European Conference on Silicon Carbide & Related Materials (ECSCRM),
Schuh, P. ; Litrico, G. ; La Via, F... - p. 1-1 , 2016
Link: https://doi.org/10.4028/..
 
?
12

Optimization of Ion Implantation processes for 4H-SiC DIMOS..:

Piluso, N. ; Fontana, E. ; Di Stefano, M. A....
MRS Advances.  1 (2016)  55 - p. 3673-3678 , 2016
Link: https://doi.org/10.1557/..
 
?
13

Progress in SiC-4H Epitaxy with Horizontal Hot Wall Reactor:

Mauceri, M. ; Pecora, A. ; Litrico, G....
ECS Journal of Solid State Science and Technology.  2 (2013)  8 - p. N3051-N3054 , 2013
Link: https://doi.org/10.1149/..
 
?
14

Defects annealing in 4H–SiC epitaxial layer probed by low t..:

Litrico, G. ; Zimbone, M. ; Musumeci, P..
Materials Science in Semiconductor Processing.  15 (2012)  6 - p. 740-743 , 2012
Link: https://doi.org/10.1016/..
 
?
15

Ion track effect on point defect production in SiC:

Litrico, G. ; Zimbone, M. ; Musumeci, P...
Radiation Effects and Defects in Solids.  166 (2011)  7 - p. 480-486 , 2011
Link: https://doi.org/10.1080/..
 
1-15