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Litwin-Staszewska, E
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1

Electrical transport properties of highly doped N-type GaN ..:

Konczewicz, L ; Litwin-Staszewska, E ; Zajac, M...
Semiconductor Science and Technology.  37 (2022)  5 - p. 055012 , 2022
Link: https://doi.org/10.1088/..
 
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2

p-type conductivity in GaN:Zn monocrystals grown by ammonot..:

Zajac, M. ; Konczewicz, L. ; Litwin-Staszewska, E....
Journal of Applied Physics.  129 (2021)  13 - p. , 2021
Link: https://doi.org/10.1063/..
 
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3

High temperature electrical transport properties of MBE-gro..:

Konczewicz, L. ; Juillaguet, S. ; Litwin-Staszewska, E....
Journal of Applied Physics.  128 (2020)  8 - p. , 2020
Link: https://doi.org/10.1063/..
 
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4

Self-compensation of carbon in HVPE-GaN:C:

Piotrzkowski, R. ; Zajac, M. ; Litwin-Staszewska, E..
Applied Physics Letters.  117 (2020)  1 - p. , 2020
Link: https://doi.org/10.1063/..
 
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5

Basic ammonothermal growth of Gallium Nitride – State of th..:

Zajac, M. ; Kucharski, R. ; Grabianska, K....
Progress in Crystal Growth and Characterization of Materials.  64 (2018)  3 - p. 63-74 , 2018
Link: https://doi.org/10.1016/..
 
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6

Doping in bulk HVPE-GaN grown on native seeds – highly cond..:

Bockowski, M. ; Iwinska, M. ; Amilusik, M....
Journal of Crystal Growth.  499 (2018)  - p. 1-7 , 2018
Link: https://doi.org/10.1016/..
 
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7

(Invited) Growth and Characterization of Bulk HVPE-GaN – Pa..:

Bockowski, Michal ; Iwinska, M ; Amilusik, M...
ECS Transactions.  80 (2017)  10 - p. 991-1003 , 2017
Link: https://doi.org/10.1149/..
 
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8

Crystallization of semi-insulating HVPE-GaN with solid iron..:

Iwinska, M. ; Piotrzkowski, R. ; Litwin-Staszewska, E....
Journal of Crystal Growth.  475 (2017)  - p. 121-126 , 2017
Link: https://doi.org/10.1016/..
 
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9

Crystal growth of HVPE-GaN doped with germanium:

Iwinska, M. ; Takekawa, N. ; Ivanov, V.Yu....
Journal of Crystal Growth.  480 (2017)  - p. 102-107 , 2017
Link: https://doi.org/10.1016/..
 
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10

HVPE-GaN growth on GaN-based Advanced Substrates by Smart C..:

Iwinska, M. ; Amilusik, M. ; Fijalkowski, M....
Journal of Crystal Growth.  456 (2016)  - p. 73-79 , 2016
Link: https://doi.org/10.1016/..
 
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11

Influence of crystallization front direction on the Mg-rela..:

Sadovyi, B. ; Amilusik, M. ; Litwin-Staszewska, E....
Optical Materials.  58 (2016)  - p. 491-496 , 2016
Link: https://doi.org/10.1016/..
 
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12

Homoepitaxial growth of HVPE-GaN doped with Si:

Iwinska, M. ; Sochacki, T. ; Amilusik, M....
Journal of Crystal Growth.  456 (2016)  - p. 91-96 , 2016
Link: https://doi.org/10.1016/..
 
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13

Growth of GaN:Mg crystals by high nitrogen pressure solutio..:

Grzegory, I. ; Boćkowski, M. ; łucznik, B....
Journal of Crystal Growth.  350 (2012)  1 - p. 50-55 , 2012
Link: https://doi.org/10.1016/..
 
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14

Multi feed seed (MFS) high pressure crystallization of 1–2i..:

Bockowski, M. ; Grzegory, I. ; Lucznik, B....
Journal of Crystal Growth.  350 (2012)  1 - p. 5-10 , 2012
Link: https://doi.org/10.1016/..
 
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15

Towards proper characterization of nonlinear metal-semicond..:

Piotrzkowski, R. ; Litwin-Staszewska, E. ; Grzanka, Sz.
Applied Physics Letters.  99 (2011)  5 - p. , 2011
Link: https://doi.org/10.1063/..
 
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