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Lotsari, A.
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1

Fast charging negative electrodes based on anatase titanium..:

Calcagno, G. ; Lotsari, A. ; Dang, A....
Materials Today Energy.  16 (2020)  - p. 100424 , 2020
Link: https://doi.org/10.1016/..
 
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2

A study of the piezoelectric properties of semipolar 112̅2 ..:

Young, T. D. ; Jurczak, G. ; Lotsari, A....
physica status solidi (b).  252 (2015)  10 - p. 2296-2303 , 2015
Link: https://doi.org/10.1002/..
 
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3

Angular-dependent Raman study of a- and s-plane InN:

Filintoglou, K. ; Katsikini, M. ; Arvanitidis, J....
Journal of Applied Physics.  117 (2015)  7 - p. , 2015
Link: https://doi.org/10.1063/..
 
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4

Direct spontaneous growth and interfacial structural proper..:

Adikimenakis, A. ; Lotsari, A. ; Dimitrakopulos, G. P....
Journal of Applied Physics.  117 (2015)  24 - p. , 2015
Link: https://doi.org/10.1063/..
 
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5

Structural anisotropic properties of a-plane GaN epilayers ..:

Lotsari, A. ; Kehagias, Th. ; Tsiakatouras, G....
Journal of Applied Physics.  115 (2014)  21 - p. , 2014
Link: https://doi.org/10.1063/..
 
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6

Interfaces between nonpolar and semipolar III-nitride semic..:

Kioseoglou, J. ; Lotsari, A. ; Kalesaki, E..
Journal of Applied Physics.  111 (2012)  3 - p. , 2012
Link: https://doi.org/10.1063/..
 
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7

Morphology and origin of V-defects in semipolar (11–22) InG..:

Lotsari, A. ; Das, A. ; Kehagias, Th....
Journal of Crystal Growth.  339 (2012)  1 - p. 1-7 , 2012
Link: https://doi.org/10.1016/..
 
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8

Influence of defect characteristics on the nanoindentation ..:

Kavouras, P. ; Lotsari, A. ; Kehagias, Th....
physica status solidi (a).  210 (2012)  1 - p. 213-217 , 2012
Link: https://doi.org/10.1002/..
 
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9

551 Genome-wide Unmasking of Epigenetically Silenced MicroR..:

Kaur, S. ; Lotsari, J. ; Peltomaki, P.
European Journal of Cancer.  48 (2012)  - p. S130-S131 , 2012
Link: https://doi.org/10.1016/..
 
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10

Structure and strain state of polar and semipolar InGaN qua..:

Koukoula, T. ; Lotsari, A. ; Kehagias, Th....
Applied Surface Science.  260 (2012)  - p. 7-12 , 2012
Link: https://doi.org/10.1016/..
 
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11

Structural properties of semipolar InGaN/GaN quantum dot su..:

Lotsari, A. ; Dimitrakopulos, G.P. ; Kehagias, Th....
Microelectronic Engineering.  90 (2012)  - p. 108-111 , 2012
Link: https://doi.org/10.1016/..
 
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12

Structure and interfacial properties of semipolar s‐plane (..:

Dimitrakopulos, G. P. ; Lotsari, A. ; Kehagias, Th....
physica status solidi (a).  210 (2012)  1 - p. 199-203 , 2012
Link: https://doi.org/10.1002/..
 
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13

Improved luminescence and thermal stability of semipolar (1..:

Das, A. ; Dimitrakopulos, G. P. ; Kotsar, Y....
Applied Physics Letters.  98 (2011)  20 - p. , 2011
Link: https://doi.org/10.1063/..
 
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14

The defect character of GaN growth on r-plane sapphire:

Smalc-Koziorowska, J. ; Tsiakatouras, G. ; Lotsari, A...
Journal of Applied Physics.  107 (2010)  7 - p. , 2010
Link: https://doi.org/10.1063/..
 
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15

Structure, stability and mechanical performance of AlN:Ag n..:

Lotsari, A. ; Dimitrakopulos, G.P. ; Kehagias, Th....
Surface and Coatings Technology.  204 (2010)  12-13 - p. 1937-1941 , 2010
Link: https://doi.org/10.1016/..
 
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