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Lu, Chun-Chang
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1

7.7 A 2.16pJ/b 112Gb/s PAM-4 Transceiver with Time-Interlea..:

, In: 2024 IEEE International Solid-State Circuits Conference (ISSCC),
Lin, Yen-Po ; Peng, Pen-Jui ; Lu, Chun-Chang... - p. 136-138 , 2024
Link: https://doi.org/10.1109/..
 
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2

Hot-Carrier Injection-Induced Disturb and Improvement Metho..:

, In: 2019 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA),
Lin, Wei-Liang ; Tsai, Wen-Jer ; Cheng, C.C.... - p. 1-2 , 2019
Link: https://doi.org/10.1109/..
 
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3

Improved electrical characteristics of high-k gated MOSFETs..:

Ruan, Dun-Bao ; Chang-Liao, Kuei-Shu ; Li, Chen-Chien...
Microelectronic Engineering.  138 (2015)  - p. 81-85 , 2015
Link: https://doi.org/10.1016/..
 
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4

Low inversion equivalent oxide thickness and enhanced mobil..:

Li, Chen-Chien ; Chang-Liao, Kuei-Shu ; Chen, Li-Ting...
Solid-State Electronics.  101 (2014)  - p. 33-37 , 2014
Link: https://doi.org/10.1016/..
 
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5

Improved electrical characteristics high-k gated MOS device..:

Li, Chen-Chien ; Chang-Liao, Kuei-Shu ; Fu, Chung-Hao...
Microelectronic Engineering.  109 (2013)  - p. 64-67 , 2013
Link: https://doi.org/10.1016/..
 
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6

Electrical characteristics of SiGe pMOSFET devices with tan..:

Li, Chen-Chien ; Chang-Liao, Kuei-Shu ; Fu, Chung-Hao...
Solid-State Electronics.  78 (2012)  - p. 17-21 , 2012
Link: https://doi.org/10.1016/..
 
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7

Process Engineering and Trap Distribution for Dielectric/Si..:

Chang-Liao, Kuei-Shu ; Fu, Chung-Hao ; Lu, Chun-Chang...
ECS Transactions.  35 (2011)  4 - p. 39-53 , 2011
Link: https://doi.org/10.1149/..
 
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8

Improved electrical characteristics and reliability of Ge M..:

Fu, Chung-Hao ; Chang-Liao, Kuei-Shu ; Tseng, Wei-Hao...
Microelectronic Engineering.  88 (2011)  7 - p. 1560-1563 , 2011
Link: https://doi.org/10.1016/..
 
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9

Tunneling component suppression in charge pumping measureme..:

Lu, Chun-Chang ; Chang-Liao, Kuei-Shu ; Lu, Chun-Yuan...
Microelectronics Reliability.  51 (2011)  12 - p. 2110-2114 , 2011
Link: https://doi.org/10.1016/..
 
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10

Comparison of positive and negative bias-temperature instab..:

Lu, Chun-Chang ; Chang-Liao, Kuei-Shu ; Tsao, Che-Hao.
Solid-State Electronics.  54 (2010)  11 - p. 1474-1478 , 2010
Link: https://doi.org/10.1016/..
 
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11

Experimental evidence of suppression on oxygen vacancy form..:

Lu, Chun-Chang ; Chang-Liao, Kuei-Shu ; Cheng, Yu-Fen.
Microelectronic Engineering.  86 (2009)  7-9 - p. 1703-1706 , 2009
Link: https://doi.org/10.1016/..
 
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12

National Project on 45 to 32 nm Metal Oxide Semiconductor F..:

Hwang, Huey-liang ; Wang, C. W. ; Chang, K. H....
e-Journal of Surface Science and Nanotechnology.  7 (2009)  - p. 507-512 , 2009
Link: https://doi.org/10.1380/..
 
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13

Employing vertical dielectric layers to improve the operati..:

Ho, Chia-Huai ; Chang-Liao, Kuei-Shu ; Lu, Chun-Yuan..
Microelectronics Reliability.  49 (2009)  4 - p. 371-376 , 2009
Link: https://doi.org/10.1016/..
 
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14

Investigation of voltage-swing effect and trap generation i..:

Lu, Chun-Yuan ; Chang-Liao, Kuei-Shu ; Lu, Chun-Chang...
Microelectronic Engineering.  85 (2008)  1 - p. 20-26 , 2008
Link: https://doi.org/10.1016/..
 
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15

Advance in next Century nanoCMOSFET research:

Hwang, Huey-Liang ; Chiou, Yan-Kai ; Chang, Che-Hao...
Applied Surface Science.  254 (2007)  1 - p. 236-241 , 2007
Link: https://doi.org/10.1016/..
 
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